AON7702B

AON7702B
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
SRFETTM AON7702B uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
20A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 9.5mΩ
RDS(ON) (at VGS=4.5V)
< 14.5mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
80
13.5
IDSM
TA=70°C
±20
15.5
IDM
TA=25°C
Units
V
20
ID
TC=100°C
Maximum
30
A
11
Avalanche Current C
IAS
19
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
18
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Jan. 2012
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
9
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
23
PD
TC=100°C
Typ
30
60
4.5
°C
Max
40
75
5.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7702B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
TJ=125°C
100
±100
nA
2.5
V
7.6
9.5
12.6
15.5
VGS=4.5V, ID=11A
11.6
14.5
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=13.5A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
2
VGS=10V, ID=13.5A
Output Capacitance
Units
V
0.5
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
1.3
mΩ
S
0.7
V
20
A
810
pF
135
pF
100
VGS=0V, VDS=0V, f=1MHz
mΩ
2.5
pF
3.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17
24
nC
Qg(4.5V) Total Gate Charge
8.5
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=13.5A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
IF=13.5A, dI/dt=500A/µs
2.3
nC
4.5
nC
4
ns
3
ns
23
ns
5
ns
5
ns
nC
4.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan. 2012
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Page 2 of 7
AON7702B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS=5V
4.5V
4V
30
30
ID(A)
40
ID (A)
40
3.5V
20
20
10
125°C
10
VGS=3.0V
25°C
0
0
0
1
2
3
4
1
5
16
3
4
5
Normalized On-Resistance
2
14
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
8
6
VGS=10V
1.8
VGS=10V
ID=13.5A
1.6
17
5
2
VGS=4.5V 10
1.4
1.2
ID=11A
1
0.8
4
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=13.5A
1.0E+01
25
125°C
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
20
15
1.0E-01
1.0E-02
10
5
25°C
1.0E-03
25°C
1.0E-04
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7702B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=13.5A
Ciss
800
Capacitance (pF)
VGS (Volts)
8
6
4
600
400
Coss
2
200
0
0
Crss
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
TJ(Max)=150°C
TC=25°C
10µs
100.0
10.0
160
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
5
100µs
1ms
10ms
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5.4°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan. 2012
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Page 4 of 7
AON7702B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
25
20
15
10
5
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
25
TA=25°C
1000
Power (W)
Current rating ID(A)
20
15
10
17
5
2
10
100
10
5
1
0
0
25
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
50
0
0.001
0.1
10
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
150
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan. 2012
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Page 5 of 7
AON7702B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
10A
0.8
0.7
0.6
VSD (V)
VDS=30V
IR (A)
1.0E-03
1.0E-04
0.5
5A
0.4
VDS=15V
0.3
IS=1A
0.2
1.0E-05
0.1
0
1.0E-06
50
100
150
0
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
20
12
5
di/dt=800A/µs
12
10
4
6
25ºC
4
125ºC
Irm
0
10
15
20
25
6
0
0
5
20
25
30
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
8
8
6
6
25ºC
Qrr
4
trr (ns)
6
5
4
125ºC
trr
2
Irm
2
2
0
0
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
2
125ºC
S
1
25ºC
0
3
25ºC
4
125ºC
Rev 0: Jan. 2012
15
10
Irm (A)
125ºC
200
10
Is=13.5A
8
Qrr (nC)
1
0
30
10
0
2
25ºC
Is=13.5A
4
25ºC
S
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
3
125ºC
2
0
5
125ºC
trr
4
2
25ºC
8
S
10
trr (ns)
125ºC
Qrr
10
8
Irm (A)
Qrr (nC)
15
0
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
14
di/dt=800A/µs
5
50
S
0
25ºC
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AON7702B
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Jan. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7