RENESAS FS10VS-12

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
FS10VS-12
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.3
0
+0.3
–0
(1.5)
3.0 +0.3
–0.5
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
1.5MAX.
10.5MAX.
1
5
0.5
q w e
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 600V
¡rDS (ON) (MAX) .............................................................. 0.94Ω
¡ID .......................................................................................... 10A
2.6 ± 0.4
4.5
0.8
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Drain current
Drain current (Pulsed)
Maximum power dissipation
Tch
Tstg
—
Channel temperature
Storage temperature
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
600
±30
V
V
10
30
150
A
A
W
–55 ~ +150
–55 ~ +150
1.2
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
600
±30
—
—
—
—
—
—
±10
V
V
µA
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
—
2
—
—
—
3
0.72
3.6
1
4
0.94
4.7
mA
V
Ω
V
4.5
—
—
—
7.0
1500
170
25
—
—
—
—
S
pF
pF
pF
—
—
—
—
25
35
130
45
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
0.83
°C/W
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
160
120
80
40
0
0
20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
5
3
2
50
100
150
200
tw=10µs
101
7
5
3
2
100µs
1ms
100
7
5
3
2
10–1
7
5
10ms
DC
TC = 25°C
Single Pulse
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
PD=
8V
150W
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
10V
8V
6V
10
6V
16
12
TC = 25°C
Pulse Test
8
5V
4
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
8
PD = 150W
6
5V
4
2
TC = 25°C
Pulse Test
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
32
ID = 20A
24
15A
16
10A
8
5A
0
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
101
7
5
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
0.4
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
16
8
4
8
12
16
TC = 25°C
VDS = 10V
Pulse Test
3
2
75°C
100
7
5
125°C
3
2
10–1 –1
10
20
2 3
5 7 100
2 3
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
5
Ciss
103
7
5
3
2
Coss
3 Tch = 25°C
Crss
2 f = 1MHz
VGS = 0V
1
10
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
0.8
TRANSFER CHARACTERISTICS
(TYPICAL)
24
102
7
5
20V
DRAIN CURRENT ID (A)
32
3
2
VGS = 10V
1.2
GATE-SOURCE VOLTAGE VGS (V)
TC = 25°C
VDS=50V
Pulse Test
0
1.6
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
40
0
TC = 25°C
Pulse Test
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
tf
102
7
5
td(on)
3
2
tr
101
10–1
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VDS = 100V
200V
12
400V
8
4
101
7
5
0
20
40
60
80
24
25°C
16
75°C
8
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
TC=125°C
GATE CHARGE Qg (nC)
3
2
10–1
VGS = 0V
Pulse Test
32
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
SOURCE CURRENT IS (A)
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)
40
Tch = 25°C
ID = 10A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100 D=1
7
5 0.5
3 0.2
2
0.1
10–1
7
5
3
2
PDM
tw
0.05
0.02
0.01
T
D= tw
T
Single Pulse
10–2
–4
–3
10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999