To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET ARY FY5AEJ-03 IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY5AEJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm 1.8 MAX. 5.0 ➀ ➂ SOURCE ➁ ➃ GATE ➄ ➅ ➆ ➇ DRAIN 0.4 1.27 ➆➇ ➂ ➃ ➁ ● ● ● ● 4V DRIVE VDSS ............................................................................... ±30V rDS (ON) (MAX) ....................................................... 30/65mΩ ID ..................................................................................... 5/–4A ➀ ➄➅ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control, DC-DC converter, Li-ionbattery, notebook p/c, etc MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA IS Avalanche current (Pulsed) Source current ISM Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg — Storage temperature Weight Conditions VGS = 0V VDS = 0V L = 10µH Ratings p-ch –30 ±20 5 ±20 –4 V A 35 5 –28 –4 A A 1.5 6.0 –1.5 –6.0 A A 1.6 Typical value Unit n-ch 30 1.7 V W –55~+150 –55~+150 °C °C 0.07 g Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) N-ch Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V IDSS Drain-source leakage current VDS = 30V, VGS = 0V VGS (th) rDS (ON) Gate-source threshold voltage ID = 1mA, VDS = 10V Drain-source on-state resistance ID = 5A, VGS = 10V rDS (ON) y fs Drain-source on-state resistance ID = 2A, VGS = 4V Forward transfer admittance ID = 5A, VDS = 10V Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr Rise time td (off) tf Turn-off delay time Fall time VSD Rth (ch-a) Source-drain voltage Thermal resistance trr Reverse recovery time Test conditions Limits Unit Min. Typ. Max. 30 — — — — ±0.1 V µA — — 0.1 mA 1.0 — 1.5 23 2.0 30 V mΩ — — 40 9 55 — mΩ S — — 550 220 — — pF pF — — 115 12 — — pF ns — 20 — ns — — 40 40 — — ns ns IS = 1.5A, VGS = 0V Channel to ambiet — — 0.75 — 1.10 78.1 V °C/W IS = 1.5A, dis/d t = –50A/µs — 100 — ns VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω P-ch Symbol Parameter Test conditions Limits Min. –30 Typ. — Max. — Unit V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V IGSS Gate-source leakage current VGS = ±20V, VDS = 0V — — ±0.1 µA IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V — –1.5 — –2.0 –0.1 –2.5 mA V rDS (ON) rDS (ON) Drain-source on-state resistance ID = –4A, VGS = –10V Drain-source on-state resistance ID = –2A, VGS = –4V — — 50 90 65 135 mΩ mΩ y fs Ciss Forward transfer admittance Input capacitance ID = –4A, VDS = –10V — — 6 870 — — S pF Coss Crss Output capacitance Reverse transfer capacitance VDS = –10V, VGS = 0V, f = 1MHz — — 230 110 — — pF pF td (on) Turn-on delay time — 10 — ns tr td (off) Rise time Turn-off delay time — — 10 60 — — ns ns tf VSD Fall time Source-drain voltage IS = –1.5A, V GS = 0V — — 30 –0.88 — –1.20 ns V Rth (ch-a) trr Thermal resistance Reverse recovery time Channel to ambiet IS =1.5A, dis/dt = 50A/µs — — — 100 73.5 — °C/W ns VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω V Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET PERFORMANCE CURVES (N-ch) 1.6 1.2 0.8 0.4 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 0 50 100 150 101 100µs 7 5 3 2 1ms 100 10ms 7 5 3 2 100ms TC = 25°C Single Pulse 10–1 7 5 3 200 tw = 10µs DC 2 3 5 7 100 2 3 5 7 101 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 10V,8V,6V,5V 20 VGS = 10V,8V,6V,5V 10 4V 16 Tc = 25°C Pulse Test 12 8 3V 4 DRAIN CURRENT ID (A) 4V DRAIN CURRENT ID (A) 5 8 6 3V 4 PD = 1.6W 2 PD = 1.6W 0 0 0.2 0.4 0.6 0.8 0 1.0 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 Tc = 25°C Pulse Test 0.8 0.6 0.4 ID = 8A 0.2 4A 2A 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS (V) 10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 0.1 DRAIN-SOURCE VOLTAGE VDS (V) 1.0 0 0 Tc = 25°C Pulse Test 80 60 VGS = 4V 40 20 10V 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 20 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 12 Tc = 25°C VDS = 10V Pulse Test 8 4 3 2 101 7 5 VDS =10V Pulse Test 3 TC = 25°C,75°C,125°C 2 0 2 4 6 8 100 0 10 10 102 Ciss 7 5 3 Coss 2 102 Crss Tch = 25°C VGS = 0V f = 1MHZ 10–1 2 3 5 7 100 2 3 5 7 101 tr 2 101 td(on) 7 5 100 10–1 2 Tch = 25°C VGS = 10V VDD = 15V RGEN = RGS = 50Ω 2 3 5 7 100 2 5 7 101 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 VDS = 6 15V 20V 4 25V 2 Tch = 25°C ID =5A 4 8 12 16 GATE CHARGE Qg (nC) 20 SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) td(off) 3 20 0 5 7 102 3 tf 7 5 3 2 10 0 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 2 5 7 101 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 3 3 DRAIN CURRENT ID (A) 2 7 5 2 GATE-SOURCE VOLTAGE VGS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0 VGS = 0V Pulse Test 16 TC = 125°C 12 75°C 25°C 8 4 0 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 100 7 5 VGS = 10V ID = 5A Pulse Test 3 2 10–1 –50 0 50 100 3.2 1.6 0.8 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 VGS = 0V ID = 1mA Pulse Test 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA Pulse Test 2.4 0 150 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) P TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 2 0.5 101 0.2 7 5 3 2 100 7 5 0.1 0.05 0.02 PDM tw 0.01 T Single Pulse D= tw T 3 2 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET PERFORMANCE CURVES (P-ch) DRAIN CURRENT ID (A) 1.6 1.2 0.8 0.4 0 0 DRAIN CURRENT ID (A) 50 100 150 200 10ms –100 –7 –5 –3 –2 100ms TC = 25°C Single Pulse –10–1 DC –2 –3 –5 –7 –101 –2 –3 –5 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) –5V –4V –12 –8 –4 –3V –0.8 –1.2 –1.6 –4V PD = 1.7W Tc = 25°C Pulse Test –0.4 VGS = –10V,–8V,–6V,–5V –10 –8 Tc = 25°C Pulse Test –6 –4 –3V –2 0 –2.0 0 –0.2 –0.4 –0.6 –0.8 –1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Tc = 25°C Pulse Test –1.6 –1.2 –0.8 ID = –8A –0.4 –4A –2A 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) –2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1ms DRAIN-SOURCE VOLTAGE VDS (V) –16 0 –7 –5 –3 –2 –7 –5 –3 –2 –3 –5 –7 –100 PD = 1.7W 0 tw = 100µs –101 CASE TEMPERATURE TC (°C) VGS = –10V,–8V,–6V –20 0 MAXIMUM SAFE OPERATING AREA –5 –3 –2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 Tc = 25°C Pulse Test 160 VGS = –4V 120 80 40 –10V 0 –10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 –20 –16 –12 Tc = 25°C VDS = –10V Pulse Test –8 –4 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 3 2 101 7 5 VDS = –10V Pulse Test TC = 25°C, 75°C,125°C 3 2 0 0 –2 –4 –6 –8 100 0 –10 –10 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 7 5 3 Coss 2 102 Crss 7 5 Tch = 25°C VGS = 0V f = 1MHZ 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 Ciss 103 td(off) 7 5 tf 3 2 tr td(on) 101 7 5 Tch = 25°C VGS = –10V VDD = –15V RGEN = RGS = 50Ω 3 2 100 –10–1 –2 –3 –5 –7 –100 2 –10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7–101 –2 –2 –3 –5 –7 –101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20 –10 VGS = 0V Pulse Test VDS = SOURCE CURRENT IS (A) –15V –8 –20V –25V –6 Tch = 25°C ID = –4A –4 –2 0 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) 2 GATE-SOURCE VOLTAGE VGS (V) –2 –3 –5 –7 –101 –2 –3 0 4 8 12 16 20 GATE CHARGE Qg (nC) 24 –16 TC = 25°C 75°C –12 125°C –8 –4 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY5AEJ-03 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 100 7 5 VGS = –10V ID = –4A Pulse Test 3 2 10–1 –50 0 50 100 –3.2 –1.6 –0.8 0 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 VGS = 0V ID = –1mA Pulse Test 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = –10V ID = –1mA Pulse Test –2.4 150 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) P TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 D = 1.0 7 5 0.5 3 2 0.2 101 0.1 7 5 0.05 3 2 0.02 100 7 5 3 2 PDM 0.01 tw T Single Pulse D= tw T 10–1 –4 10 2 3 5 710–3 2 3 5 7 10–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Aug. 1999