RENESAS FX20ASJ-03

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Pch POWER MOSFET
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FX20ASJ-03
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HIGH-SPEED SWITCHING USE
FX20ASJ-03
OUTLINE DRAWING
1.0
2.3
2.3
10 max
2.3 min
1.0 max
5.5 ± 0.2
4
0.9 max
0.5 ± 0.1
1.5 ± 0.2
6.5
5.0 ± 0.2
Dimensions in mm
A
0.5 ± 0.2
2.3
0.8
1
2
3
3
• 4V DRIVE
• VDSS ................................................................................ –30V
• rDS (ON) (MAX) .............................................................. 0.13Ω
• ID ....................................................................................... –20A
• Integrated Fast Recovery Diode (TYP.) ...........50ns
1
2
3
4
1
GATE
DRAIN
SOURCE
DRAIN
2 4
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
VGSS
Drain-source voltage
Gate-source voltage
VGS = 0V
VDS = 0V
–30
±20
V
V
ID
IDM
IDA
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed) L = 10µH
–20
–80
–20
A
A
A
IS
ISM
PD
Tch
Tstg
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
–20
–80
30
–55 ~ +150
–55 ~ +150
A
A
W
°C
°C
0.26
g
—
Parameter
Weight
Conditions
Typical value
Jan.1999
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FX20ASJ-03
P
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Limits
Test conditions
Typ.
Max.
ID = –1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
–30
—
—
—
—
—
—
±0.1
–0.1
V
µA
mA
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –2A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –5V
–1.3
—
—
—
–1.8
0.11
0.21
–1.1
–2.3
0.13
0.29
–1.3
V
Ω
Ω
V
—
—
—
—
5.8
1130
232
83
—
—
—
—
S
pF
pF
pF
—
—
—
—
15
33
49
26
—
—
—
—
ns
ns
ns
ns
—
–1.0
–1.5
V
—
—
—
50
4.17
—
°C/W
ns
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
Turn-off delay time
Fall time
Source-drain voltage
IS = –10A, VGS = 0V
Channel to case
Thermal resistance
Reverse recovery time
Unit
Min.
IS = –10A, dis/dt = 50A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
–102
32
24
16
8
0
0
–20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
–2
50
100
150
100µs
–101
–7
–5
1ms
–3
–2
TC = 25°C
Single Pulse
10ms
–100
DC
–7
–5
–2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V
–8V
–6V
–6V
VGS =
–10V
–8V
–7V
–12
tw =
10µs
–3
–2
CASE TEMPERATURE TC (°C)
Tc = 25°C
Pulse Test
–16
–7
–5
–3
–2
200
–5V
PD = 30W
–8
–4V
–4
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
40
–5V
–8
–4V
–6
–4
Tc = 25°C
Pulse Test
–2
–3V
–3V
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
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FX20ASJ-03
P
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.40
Tc = 25°C
Pulse Test
VGS = –4V
–4.0
–3.0
ID =
–20A
–2.0
–1.0
–10A
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
–5.0
Tc = 25°C
Pulse Test
0.32
0.24
–10V
0.16
0.08
–5A
0
0
–2
–4
–6
0
–10–1 –2 –3 –5 –7–100 –2 –3 –5– 7 –101 –2 –3 –5 –7–102
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
–20
101
Tc = 25°C
VDS = –10V
Pulse Test
–16
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
–8
–12
–8
–4
7
5
4
3
TC = 25°C 75°C
2
125°C
100
7
5
4
3
VDS = –5V
Pulse Test
2
0
0
–2
–4
–6
–8
10–1
–10
–3
3
2
103
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
f = 1MHZ
VGS = 0V
Ciss
7
5
3
2
Coss
102
7
5
–2 –3
DRAIN CURRENT ID (A)
Crss
3
2
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
7
5
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
7
5
–5 –7 –101
–2 –3
GATE-SOURCE VOLTAGE VGS (V)
2
104
–5 –7 –100
3
2
102
7
5
3
2
101
7
5
3
2
100
td(off)
tr
tf
td(on)
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
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FX20ASJ-03
P
HIGH-SPEED SWITCHING USE
–8
SOURCE CURRENT IS (A)
Tch = 25°C
ID = –20A
VDS =
–10V
–20V
–6
–25V
–4
–2
0
4
8
12
16
75°C
125°C
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VGS = –10V
ID = 1/2ID
Pulse Test
100
7
5
4
3
2
–50
0
50
100
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
TC =
25°C
–20
GATE CHARGE Qg (nC)
2
10–1
–30
0
101
7
5
4
3
VGS = 0V
Pulse Test
–40
20
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
–50
–10
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5 D = 1.0
0.5
3
2
0.2
0.1
PDM
100
7
5
3
2
tw
0.05
0.02
0.01
Single Pulse
T
D= tw
T
10–1 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Jan.1999