To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE FY6BCH-02 OUTLINE DRAWING ➄ ➀ ➃ 6.4 4.4 ➇ Dimensions in mm 1.1 3.0 ➀ ➇ DRAIN ➁ ➂ ➅ ➆ SOURCE ➃ ➄ GATE 0.275 0.65 ➀ ➇ ➃ ● 2.5V DRIVE ● VDSS .................................................................................. 20V ● rDS (ON) (MAX) .............................................................. 30mΩ ● ID ........................................................................................... 6A ➄ ➁➂ ➅➆ TSSOP8 APPLICATION Li-ion battery, DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions 20 ±10 V V L = 10µH 6 42 6 A A A 1.5 6.0 1.5 –55 ~ +150 –55 ~ +150 A A W °C °C 0.035 g Typical value Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V 20 — — — — — — ±0.1 0.1 V µA mA ID = 1mA, VDS = 10V ID = 6A, VGS = 4V ID = 3A, VGS = 2.5V ID = 6A, VGS = 4V ID = 6A, VDS = 10V 0.5 — — — 0.9 25 32 0.15 1.3 30 40 0.18 V mΩ mΩ V — — — — 13.0 800 280 200 — — — — S pF pF pF — — — — 20 55 90 100 — — — — ns ns ns ns — — 1.10 V — — — 50 83.3 — °C/W ns VDS = 10V, VGS = 0V, f = 1MHz VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.5A, VGS = 0V Channel to ambient Thermal resistance Reverse recovery time Unit Min. IS = 1.5A, dis/dt = –50A/µs PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 1.6 1.2 0.8 0.4 100µs 101 7 5 1ms 3 2 10ms 100 7 5 100ms 3 2 10–1 TC = 25°C 0 0 50 100 150 7 5 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 4V 3V 2.5V 2V 12 8 TC = 25°C Pulse Test 4 1.5V PD = 1.5W 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 10 16 0 DC Single Pulse 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) 20 DRAIN CURRENT ID (A) tw = 10µs 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 VGS = 5V 4V 3V 2.5V 2V 8 6 PD = 1.5W 4 1.5V 2 0 TC = 25°C Pulse Test 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 100 TC = 25°C Pulse Test 0.8 0.6 ID = 12A 6A 3A 0.4 0.2 0 0 1.0 2.0 3.0 TC = 25°C Pulse Test 80 60 VGS = 2.5V 40 4V 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 5.0 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 20 102 TC = 25°C VDS = 10V Pulse Test 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 12 8 4 VDS = 10V 7 Pulse Test 5 4 TC = 25°C 3 75°C 2 125°C 101 7 5 4 3 2 0 0 1.0 2.0 3.0 4.0 100 5 7 100 5.0 2 3 4 5 7 101 2 3 4 5 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 2 td(off) Ciss 7 5 4 3 Coss 2 Crss 102 7 5 4 TCh = 25°C 3 f = 1MHZ VGS = 0V 2 10–1 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) 102 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 4 tr 3 2 tf td(on) 101 7 5 TCh = 25°C 4 VDD = 10V 3 VGS = 4V RGEN = RGS = 50Ω 2 10–1 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) 3.0 VDS = 7V 10V 15V 2.0 1.0 0 2 4 6 8 12 4 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 3 2 100 7 5 3 2 –50 0 50 100 1.2 0.8 0.4 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 1.6 CHANNEL TEMPERATURE Tch (°C) 0.4 0 GATE CHARGE Qg (nC) VGS = 4V 7 ID = 6A 5 Pulse Test 1.4 TC = 125°C 75°C 25°C 8 0 101 10–1 VGS = 0V Pulse Test 16 10 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 20 TCh = 25°C ID = 6A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 D = 1.0 5 3 0.5 2 1 0.2 10 7 0.1 5 3 0.05 2 100 7 5 3 2 PDM 0.02 0.01 Single Pulse tw T D= tw T 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep. 2001