To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET ARY FY7BCH-02B MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FY7BCH-02B OUTLINE DRAWING ➄ ➀ ➃ 6.4 4.4 ➇ Dimensions in mm 1.1 3.0 ➀ ➇ DRAIN ➁ ➂ ➅ ➆ SOURCE ➃ ➄ GATE 0.275 0.65 ➀ ➇ ➃ ● ● ● ● 2.5V DRIVE VDSS .................................................................................. 20V rDS (ON) (MAX) .............................................................. 21mΩ ID ............................................................................................ 7A ➄ ➁➂ ➅➆ TSSOP8 APPLICATION Motor control, Lamp control, Solenoid control, DC-DC converte, etc MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA IS Avalanche current (Pulsed) Source current ISM Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg — Storage temperature Weight Conditions VGS = 0V VDS = 0V Ratings Unit 20 V ±10 V A 7 49 L = 10µH Typical value 7 1.5 A A A A 6.0 1.6 –55~+150 –55~+150 °C °C 0.035 g W Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY7BCH-02B . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS Drain-source leakage current VGS (th) rDS (ON) Test conditions Limits Typ. ID = 1mA, VGS = 0V 20 — — V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V — — — — ±0.1 0.1 µA mA Gate-source threshold voltage Drain-source on-state voltage ID = 1mA, VDS = 10V 0.5 0.8 1.3 V rDS (ON) VDS (ON) ID = 7A, VGS = 4V Drain-source on-state resistance ID = 3.5A, VGS = 2.5V Drain-source on-state voltage ID = 7A, VGS = 4V — — 17 21 21 30 mΩ mΩ y fs Ciss Forward transfer admittance Input capacitance ID = 7A, VDS = 10V — — 0.119 20 0.147 — V S Coss Crss Output capacitance Reverse transfer capacitance VDS = 10V, VGS = 0V, f = 1MHz — — 1350 400 — — pF pF td (on) Turn-on delay time — — 300 30 — — pF ns tr td (off) Rise time Turn-off delay time — 80 — ns tf VSD Fall time Source-drain voltage — — 150 160 — — ns ns Rth (ch-a) trr Thermal resistance Reverse recovery time IS = 1.5A, VGS = 0V Channel to ambiet — — 0.75 — 1.10 78.1 V °C/W IS = 1.5A, dis/d t = –50A/µs — 50 — ns VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω Max. Unit Min. Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY7BCH-02B . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET PERFORMANCE CURVES DRAIN CURRENT ID (A) 1.6 1.2 0.8 0.4 0 0 DRAIN CURRENT ID (A) 50 100 150 100µs 101 7 5 3 2 1ms 10ms 100 7 5 3 2 TC = 25°C Single Pulse 100ms 3 5 7 100 2 3 5 7 101 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2V 2.5V 30 2V Tc = 25°C Pulse Test 20 10 1.5V 0.4 VGS = 4V,3V,2.5V 20 3V PD = 1.6W 0 DC 2 CASE TEMPERATURE TC (°C) VGS = 4V 40 7 200 0.8 1.2 1.6 Tc = 25°C Pulse Test 16 12 1.5V 8 4 PD = 1.6W 0 2.0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 2.0 VGS = 2.5V Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) tw = 10µs 3 2 10–1 50 0 MAXIMUM SAFE OPERATING AREA 7 5 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.0 1.6 1.2 0.8 ID = 14A 0.4 7A 32 24 4V 16 8 Tc = 25°C Pulse Test 3A 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY7BCH-02B . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 50 TC = 25°C,75°C,125°C 40 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 30 Tc = 25°C VDS = 10V Pulse Test 20 10 3 2 101 7 5 VDS =10V Pulse Test 3 2 0 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 SWITCHING CHARACTERISTICS (TYPICAL) 3 2 SWITCHING TIME (ns) 103 7 5 3 2 Coss Crss Tch = 25°C VGS = 0V f = 1MHZ 102 7 5 tf td(off) 102 7 5 tr 3 2 td(on) 101 Tch = 25°C VGS = 4V VDD = 10V RGEN = RGS = 50Ω 7 5 3 2 3 2 5 7 102 3 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) Ciss CAPACITANCE Ciss, Coss, Crss (pF) 5 7 101 DRAIN CURRENT ID (A) 2 10–1 2 3 5 7 100 2 3 5 7 101 100 10–1 2 2 3 5 7 100 2 5 7 101 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VDS = 7V 4.0 10V 3.0 15V 2.0 1.0 ID =7A Tch = 25°C 0 8 16 24 32 GATE CHARGE Qg (nC) 40 SOURCE CURRENT IS (A) 5.0 GATE-SOURCE VOLTAGE VGS (V) 3 GATE-SOURCE VOLTAGE VGS (V) 3 0 2 TC = 25°C 16 75°C 12 125°C 8 VGS = 0V TC = 25°C Pulse Test 4 0 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FY7BCH-02B . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 2.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 100 7 5 VGS = 4V ID = 7A Pulse Test 3 2 10–1 –50 0 50 100 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 VGS = 0V ID = 1mA 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) P TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 PDM 100 7 5 tw Single Pulse T D= tw T 3 2 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Aug. 1999