To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC2613 Silicon NPN Triple Diffused ADE-208-886 (Z) 1st. Edition September 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Collector current IC 5 A Collector peak current I C(peak) 10 A Base current IB 2.5 A 40 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SC2613 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain voltage VCEO(sus) 400 — — V I C = 0.2 A, RBE = ∞, L = 100 mH VCEX(sus) 400 — — V I C = 5 A, IB1 = –IB2 = 1 A VBE = –5 V, L = 180 µH, Clamped Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 10 mA, IC = 0 Collector cutoff current I CBO — — 100 µA VCB = 400 V, IE = 0 I CEO — — 100 µA VCE = 350 V, RBE = ∞ hFE1 15 — — VCE = 5 V, IC = 2.5 A*1 hFE2 7 — — VCE = 5 V, IC = 5 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 2.5 A, IB = 0.5 A*1 Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 2.5 A, IB = 0.5 A*1 Turn on time t on — — 1.0 µs I C = 5 A, IB1 = –IB2 = 1 A, Storage time t stg — 1.2 2.5 µs VCC ≅ 150 V Fall time tf — — 1.0 µs DC current transfer ratio 1. Pulse test. Maximum Collector Dissipation Curve Area of Safe Operation Collector Current IC (A) 100 40 20 iC (peak) 10 IC (max) (Continuous) 1.0 0.1 Ta = 25°C, 1 Shot 0.01 0 2 50 100 Case Temperature TC (°C) 150 µs 25 s s 0µ m s 25 0 m 1 =1 ion at PW er C) Op 25° DC = (T C Collector power dissipation Pc (W) 60 50 µs Note: 1 3 10 30 100 300 1,000 Collector to emitter Voltage VCE (V) 2SC2613 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) Collector Current Derating Rate Collector Current derating rate (%) 100 IS /B 80 Lim it A re a 60 40 20 0 50 100 Case temperature TC (°C) 3 s–10 10 m 1.0 0.3 0.03 6 400 V, 5 A 4 2 IB2 = –1.0 A 450 V, 1.0 A 0 0 100 200 300 400 500 Collector to emitter Voltage VCE (V) TC = 25°C 0.01 0.01 0.1 0.01 0.1 1.0 10 (s) 1.0 10 (ms) Time t Collector to Emitter Voltage vs. Base to Emitter Resistance Collector to emitter voltage VCER (V) Collector Current IC (A) 8 ms 1 150 325 V, 10 A 10 s– 0µ 0.1 Reverse Bias Area of Safe Operation 10 s 600 IC = 1 mA 500 400 300 100 1k 10 k 100 k 1M Base to emitter resistance RBE (Ω) 3 2SC2613 Typical Transfer Characteristics Typical Output Characteristics 5 0.5 0.4 4 Collector Current IC (A) Collector Current IC (A) 5 0.3 0.2 3 0.1 2 0.05 A 1 TC = 25°C TC = 25°C VCE = 5 V 4 3 2 1 IB = 0 0 1 2 3 4 5 Collector to emitter Voltage VCE (V) 0 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) Collector to Emitter Saturation Voltage vs. Base Current DC current transfer ratio hFE 100 75°C 30 25°C °C T C = –25 10 3 VCE = 5 V 1 0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A) 4 Collector to emitter saturation voltage VCE (sat) DC Current Transfer Ratio vs. Collector Current 10 3 2A 1.0 0.3 1A 0.1 0.03 0.01 0.01 0.03 IC = 0.5 A TC = 25°C 0.1 0.3 1.0 3 Base current IB (A) 10 2SC2613 Base to Emitter Saturation Voltage vs. Collector Current Switching Time vs. Collector Current 10 3 3 Switching time t (µs) IC = 5 IB TC = 25°C 1.0 0.3 0.1 tstg 1.0 tf 0.3 ton 0.1 0.03 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) IC = 5 IB1 = –5 IB2 . VCC =. 150 V 0.01 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 10 Switching Time vs. Case Temperature 5 Switching time t (µs) Base to emitter saturation voltage VBE (sat) 10 2 tstg 1.0 tf 0.5 ton 0.2 IC = 5 A IB1 = –IB2 =1 A RL = 30 Ω . VCC =. 150 V 0.1 0.05 0 25 50 75 100 Case temperature TC (°C) 125 5 2SC2613 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. 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