BTA/BTB12 and T12 Series

BTA/BTB12 and T12 Series
12A TRIACS
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
12
A
VDRM/VRRM
600 and 800
V
IGT (Q )
1
5 to 50
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
D2PAK
(T12-G)
A2
G
A1
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I ²t
dI/dt
Parameter
RMS on-state current (full sine wave)
PG(AV)
Tstg
Tj
2014-6-9
Unit
12
A
A
D²PAK/TO-220AB
Tc = 105°C
TO-220AB Ins.
Tc = 90°C
F = 50 Hz
t = 20 ms
120
F = 60 Hz
t = 16.7 ms
126
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state
voltage
IGM
Value
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
1
78
A² s
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
VDRM/VRRM
V
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
+ 100
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BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V
Quadrant
RL = 30 Ω
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
IH (2)
IT = 100 mA
IL
IG = 1.2 IGT
T12
TW
SW
CW
BW
35
5
10
35
50
I - II - III
MAX.
I - II - III
MAX.
1.3
I - II - III
MIN.
0.2
I - III
■
mA
V
V
MAX.
35
10
15
35
50
mA
MAX.
50
10
25
50
70
mA
60
15
30
60
80
MIN.
500
20
40
500
1000
V/µs
MIN.
-
3.5
6.5
-
-
A/ms
VD = 67 %VDRM gate open
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
Unit
T1235
II
dV/dt (2)
BTA/BTB12
Tj = 125°C
(dV/dt)c = 10 V/µs
Tj = 125°C
-
1
2.9
-
-
Without snubber
Tj = 125°C
6.5
-
-
6.5
12
STANDARD (4 Quadrants)
Symbol
Test Conditions
IGT (1)
VD = 12 V
Quadrant
RL = 30 Ω
VD = VDRM RL = 3.3 kΩ Tj = 125°C
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
25
50
50
100
Unit
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
I - III - IV
VD = 67 %VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
B
MAX.
Tj = 125°C
mA
MAX.
25
50
mA
MAX.
40
50
mA
80
100
MIN.
200
400
V/µs
MIN.
5
10
V/µs
II
dV/dt (2)
C
I - II - III
IV
VGT
VGD
BTA/BTB12
STATIC CHARACTERISTICS
Symbol
VT (2)
Test Conditions
ITM = 17 A
tp = 380 µs
Tj = 25°C
Value
Unit
MAX.
1.55
V
Vto (2)
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
35
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
1
mA
Tj = 125°C
IRRM
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2014-6-9
2
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BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
S=1
Value
Unit
D²PAK/TO-220AB
1.4
°C/W
TO-220AB Insulated
2.3
D²PAK
45
TO-220AB
TO-220AB Insulated
60
cm²
°C/W
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Sensitivity
Type
Package
X
50 mA
Standard
TO-220AB
X
X
50 mA
Snubberless
TO-220AB
BTA/BTB12-xxxC
X
X
25 mA
Standard
TO-220AB
BTA/BTB12-xxxCW
X
X
35 mA
Snubberless
TO-220AB
BTA/BTB12-xxxSW
X
X
10 mA
Logic level
TO-220AB
BTA/BTB12-xxxTW
X
X
5 mA
Logic Level
TO-220AB
T1235-xxxG
X
X
35 mA
Snubberless
D²PAK
Part Number
600 V
800 V
BTA/BTB12-xxxB
X
BTA/BTB12-xxxBW
BTB: non insulated TO-220AB package
ORDERING INFORMATION
BT A 12 -
600
BW
(RG)
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
VOLTAGE:
600: 600V
800: 800V
CURRENT: 12A
T 12 35
-
600 G
PACKING MODE
Blank: Bulk
RG: Tube
(-TR)
TRIAC
SERIES
PACKAGE:
G: D2PAK
CURRENT: 12A
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
35: 35mA
2014-6-9
3
PACKING MODE:
Blank: Tube
-TR: Tape & Reel
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BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number
Marking
Weight
Base
quantity
Packing
mode
BTA/BTB12-xxxyz
BTA/BTB12-xxxyz
2.3 g
250
Bulk
BTA/BTB12-xxxyzRG
BTA/BTB12-xxxyz
2.3 g
50
Tube
T1235-xxxG
T1235xxxG
1.5 g
50
Tube
T1235-xxxG-TR
T1235xxxG
1.5 g
1000
Tape & reel
Note: xxx = voltage, yy = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
P (W)
IT(RMS) (A)
16
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
14
12
10
8
6
4
2
0
IT(RMS)(A)
0
1
2
3
4
5
6
7
8
9
10 11 12
BTB/T12
BTA
Tc(°C)
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
K=[Zth/Rth]
IT(RMS) (A)
3.5
1E+0
D2PAK
(S=1cm2)
3.0
Zth(j-c)
2.5
2.0
1E-1
Zth(j-a)
1.5
1.0
0.5
0.0
Tamb(°C)
0
2014-6-9
25
50
75
tp(s)
100
125
4
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
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BTA/BTB12 and T12 Series
Fig. 4:
values).
On-state characteristics (maximum
Fig. 5: Surge peak on-state current versus
number of cycles.
ITM (A)
ITSM (A)
100
Tj max
10
Tj=25°C
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
VTM(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
130
120
110
100
90
80
70
60
50
40
30
20
10
0
One cycle
Repetitive
Tc=90°C
Number of cycles
1
10
100
1000
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
Tj initial=25°C
dI/dt limitation:
50A/µs
1000
t=20ms
Non repetitive
Tj initial=25°C
2.0
IGT
ITSM
1.5
100
I²t
IH & IL
1.0
0.5
tp (ms)
10
0.01
Tj(°C)
0.10
1.00
10.00
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
-20
0
20
40
60
80
100
120
140
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
2.8
4.5
2.4
SW
4.0
3.5
2.0
C
1.6
0.0
-40
2.5
1.2
BW/CW/T1235
2.0
0.8
0.4
0.0
0.1
2014-6-9
TW
3.0
B
1.5
1.0
(dV/dt)c (V/µs)
1.0
10.0
(dV/dt)c (V/µs)
0.5
100.0
5
0.0
0.1
1.0
10.0
100.0
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