16T Series SEMICONDUCTOR RoHS RoHS TRIACs, 16A Snubberless, Logic Level and Standard Features ● Medium current Triac ● Low thermal resistance with clip bonding ● Low thermal resistance insulation ceramic for insulated 16T ● High commutation (4Q) or very high commutation (3Q) capability ● RoHS compliant, UL certified (File NO:E320098) ● Insulated tab (16TxxAI series, rated at 2500 V RMS ) TO-263 (D²PAK) (16Txx H) A2 Applications ● Snubberless versions (With Suffix W) especially recommended for use on inductive loads, because of their high commutation performances ● On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers A1 A2 G 1 TO-220AB (non-Insulated) (16Txx A) 2 3 TO-220AB (lnsulated) (16Txx AI) Description Available either in through-hole or surface-mount packages, the 16TxxA and 16TxxAl triacs series are suitable for general purpose mains power AC switcging SYMBOL VALUE UNIT I T(RMS) 16 A V DRM /V RRM to V I GT(Q1) 5 to 50 mA Device summary SYMBOL PARAMETER IT(RMS) On-state RMS current VDRM/VRRM Repetitive peak off-state voltage IGT(Snubberless) 16TxxAI(1) 16TxxA 16 16 600/800/1000 600/800/1000 Triggering gate current 35/50 35/50 IGT(logic level) Triggering gate current 10 10 IGT(standard) Triggering gate current 25/50 25/50 Note 1: Insulated www.nellsemi.com Page 1 of 7 16T Series SEMICONDUCTOR RoHS RoHS ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RMS on-state current (full sine wave) TEST CONDITIONS ITSM Tc = 86ºC F =50 Hz t = 20 ms 160 F =60 Hz t = 16.7 ms 168 t p = 10 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) Storage temperature range Operating junction temperature range A TO-220insulate 2 Average gate power dissipation 16 Tc = 110ºC I t I2t Value for fusing UNIT TO-220/TO-263 IT(RMS) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) VALUE A 128 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W T j =125ºC Tstg - 40 to + 150 Tj - 40 to + 125 ºC ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 16Txxxx SYMBOL IGT(1) TEST CONDITIONS Unit V D = V DRM , R L = 3.3KΩ T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT (dI/dt)c(2) CW BW 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III dV/dt(2) SW mA V D = 12 V, R L = 33Ω VGT VGD QUADRANT II V D = 67% V DRM , gate open ,T j = 125°C MIN. (dV/dt)c = 0.1 V/µs T j = 125°C (dV/dt)c = 10 V/µs T j = 125°C Without snubber T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com MAX. Page 2 of 7 MIN. 15 40 55 25 50 70 30 60 80 40 500 1000 8.5 - - 3 - - - 8.5 14 mA mA V/µs A/ms 16T Series SEMICONDUCTOR RoHS RoHS ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 16Txxxx TEST CONDITIONS SYMBOL QUADRANT I - II - III IGT(1) V D = 12 V, R L = 33Ω C MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT (dV/dt)c(2) 25 50 50 100 mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) UNIT B mA 25 50 40 60 80 120 mA V D = 67% V DRM , gate open, T j = 125°C MIN. 200 400 V/µs (dI/dt)c = 7 A/ms, T j = 125°C MIN. 5 10 V/µs STATIC CHARACTERISTICS SYMBOL TEST CONDITIONS VALUE UNIT MAX. 1.55 V T j = 125°C MAX. 0.85 V Dynamic resistance T j = 125°C MAX. 25 mΩ VD = VDRM T j = 25°C 5 µA VR = VRRM T j = 125°C 1 mA VALUE UNIT TO-220AB, D²PAK TO-220AB Insulated 1.2 2.1 °C/W D²PAK 45 TO-220AB Insulated, TO-220AB 60 VTM(2) I TM = 22.5 A, t P = 380 µs T j = 25°C Vt0(2) Threshold voltage R d (2) IDRM IRRM MAX. Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S (1)=1cm² °C/W Note 1: S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 50 mA Snubberless TO-220AB V V V 25 mA Standard TO-220AB 16TxxA-CW/16TxxAl-CW V V V 35 mA Snubberless TO-220AB 16TxxA-SW/16TxxAl-SW V V V 10 mA Logic level TO-220AB 16TxxH-SW V V V 10 mA Logic level D²PAK 16TxxH-CW V V V 35 mA Snubberless D²PAK 600 V 800 V 1000 V 16TxxA-B/1 6TxxAl-B V V 16TxxA-BW/16TxxAl-BW V 16TxxA-C/16TxxAl-C www.nellsemi.com Page 3 of 7 16T Series SEMICONDUCTOR RoHS RoHS ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 16TxxA-yy 16TxxA-yy TO-220AB 2.0g 50 Tube 16TxxAI-yy 16TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 16TxxH-yy 16TxxH-yy TO-236(D 2 PAK) 2.0g 50 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME 16 T 06 Current 16 = 16A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) H = TO-263 (D²PAK) IGT Sensitivity B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level www.nellsemi.com BW = 50mA Snubberless CW = 35mA Snubberless Page 4 of 7 A - BW 16T Series SEMICONDUCTOR Fig.1 Maximum power dissipation versus on-state rms current (full cycle) RoHS RoHS Fig.2 On-state rms current versus case temperature (full cycle) IT(RMS)(A) P(W) 18 20 18 16 16 14 14 12 12 TO-263AB TO-220AB insulated 10 10 8 8 6 6 4 4 2 2 IT(RMS)(A) 0 0 8 6 4 2 12 10 14 16 Fig.3 On-state current versus ambient temperature (full cycle) 50 25 0 100 75 125 Fig.4 Relative variation of thermal impedance versus pulse duration K=[Zth /Rth] IT(RMS)(A) 4.0 TC(°C) 0 1E+0 printed circuit board Fr4, copper thickness:35 µm D²PAK (S=1cm²) 3.5 Zth(j-c) 3.0 Zth(j-a) 2.5 1E-1 2.0 1.5 1.0 0.5 Tc(°c) 0.0 0 50 25 100 75 125 ITM(A) 100 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 surge peak on- state current versus number of cycles Fig.5 On-state characteristics (maximum values) 200 tp(s) 1E-2 1E-3 180 Tj max. Vto=0.85V Rd=25mΩ 160 Tj=Tjmax. 120 ITSM(A) t=20ms 140 One cycle Non repetitive Tjinitial=25°C 100 Tj=25°c Repetitive Tc=85°C 80 10 60 40 20 V TM (V) 1 Number of cycles 0 0.5 1.0 1.5 www.nellsemi.com 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Page 5 of 7 1 10 100 1000 16T Series SEMICONDUCTOR Fig7. Non-repetitive surge peak on-state current for a sinusoidal RoHS RoHS Fig.8 Relative variation of gate trigger current ITSM(A), I²t(A²S) IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C] 3000 2.5 Tj initial=25°C dl/dt limitation: 50A/µs holding current and latching current versus junction temperature (typical values) 2.0 IGT 1000 lTSM 1.5 1.0 IH&IL 0.5 pulse with width tp<10ms and corresponding value of l²t 100 0.10 0.01 l²t Tj(°C) 0.0 -40 10.00 1.00 0 -20 20 60 40 80 100 120 140 tp(ms) Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Fig.10 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 6 snubberless and Logic level types 1.8 (dI/dt)c [Tj ] / (dI/dt)c [Tj s pecified] standard types SW 5 C 1.6 B 4 1.4 1.2 3 CW/BW 1.0 2 0.8 1 0.6 Tj(°C) (dV/dt)c (V/µs) 0.4 0.1 1.0 0 100.0 10.0 50 25 0 75 Fig.11 D²PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit FR4, copper thickness: 35µm Rth(j-a)(°C/W) 80 70 60 50 D²PAK 40 30 20 10 S(cm²) 0 0 www.nellsemi.com 4 8 12 16 20 Page 6 of 7 24 28 32 36 40 100 125 16T Series SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) www.nellsemi.com Page 7 of 7 2.79 (0.110) RoHS RoHS