RoHS 6T Series RoHS SEMICONDUCTOR TRIACs, 6A Snubberless, Logic Level and Standard MAIN FEATURES 2 SYMBOL VALUE UNIT I T(RMS) 6 A 2 2 1 V DRM /V RRM 600 to 1000 V I GT(Q1) 5 to 50 mA 1 2 3 3 TO-251 (I-PAK) (6TxxF) TO-252 (D-PAK) (6TxxG) DESCRIPTION The 6T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. A2 1 A1 A2 G TO-220AB (non-Insulated) (6TxxA) 2 3 TO-220AB (lnsulated) (6TxxAI) By using an internal ceramic pad, the 6T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (File ref. :E320098) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS Tc = 105ºC F =50 Hz t = 20 ms 60 F =60 Hz t = 16.7 ms 63 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A TO-220AB insulated t p = 10 ms Storage temperature range 6 Tc = 110ºC 2 Average gate power dissipation UNIT TO-251/TO-252/TO-220AB I t I2t Value for fusing VALUE A 21 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 6 RoHS 6T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 6Txxxx SYMBOL IGT(1) QUADRANT TEST CONDITIONS V D = V DRM , R L = 3.3KΩ T j = 125°C IH(2) I T = 200 mA IL I G = 1.2 I GT (dI/dt)c(2) CW BW 05 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III dV/dt(2) SW mA V D = 12 V, R L = 30Ω VGT VGD Unit TW 10 15 40 55 10 25 50 70 15 30 60 80 20 40 400 1000 2.7 3.5 - - 1.2 2.4 - - - - 3.5 5.3 mA MAX. II V D = 67% V DRM , gate open ,T j = 125°C MIN. (dV/dt)c = 0.1 V/µs T j = 125°C (dV/dt)c = 10 V/µs T j = 125°C Without snubber T j = 125°C MIN. mA V/µs A/ms ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 6Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω C MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 200 mA IL I G = 1.2 I GT (dV/dt)c(2) 25 50 50 100 UNIT mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) B 25 50 40 50 80 100 mA mA V D = 67% V DRM , gate open, T j = 125°C MIN. 200 400 V/µs (dI/dt)c = 2.7 A/ms, T j = 125°C MIN. 5 10 V/µs STATIC CHARACTERISTICS SYMBOL VTM(2) TEST CONDITIONS VALUE UNIT MAX. 1.55 V T j = 125°C MAX. 0.85 V T j = 125°C MAX. 60 mΩ 5 µA 1 mA I TM = 8.5 A, t P = 380 µs T j = 25°C Threshold voltage R d (2) Dynamic resistance IDRM IRRM VDRM = VRRM Vt0 (2) T j = 25°C MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com Page 2 of 6 RoHS 6T Series RoHS SEMICONDUCTOR THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient VALUE UNIT 1.8 2.7 °C/W 60 °C/W TO-220AB, TO-251, TO-252 TO-220AB Insulated TO-220AB, TO-251, TO-252 TO-220AB Insulated PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 50 mA Snubberless TO-220AB V V V 25 mA Standard TO-220AB 6TxxA-CW/6TxxAl-CW V V V 35 mA Snubberless TO-220AB 6TxxA-SW/6TxxAl-SW V V V 10 mA Logic level TO-220AB 6TxxA-TW/6TxxAI-TW V V V 5 mA Logic level TO-220AB 6TxxF-BW V V V 50 mA Snubberless I-PAK 6TxxG-BW V V V 50 mA Snubberless D-PAK 6TxxF-CW V V V 35 mA Snubberless I-PAK 6TxxG-CW V V V 35 mA Snubberless D-PAK 6TxxF-SW V V V 10 mA Logic level I-PAK 6TxxG-SW V V V 10 mA Logic level D-PAK 6TxxF-B V V V 50 mA Standard I-PAK 6TxxG-B V V V 50 mA Standard D-PAK 6TxxF-C V V V 25 mA Standard I-PAK 6TxxG-C V V V 25 mA Standard D-PAK 600 V 800 V 1000 V 6TxxA-B/ 6TxxAl-B V V 6TxxA-BW/6TxxAl-BW V 6TxxA-C/6TxxAl-C ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 6TxxA-yy 6TxxA-yy TO-220AB 2.0g 50 Tube 6TxxAI-yy 6TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 6TxxF-yy 6TxxF-yy TO-251(I-PAK) 0.40g 80 Tube 6TxxG-yy 6TxxG-yy TO-252(D-PAK) 0.38g 80 Tube Note: xx = voltage, yy = sensitivity www.nellsemi.com Page 3 of 6 RoHS 6T Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME A - BW T 06 6 Current 6 = 6A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) IGT Sensitivity B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level BW = 50mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P(W) IT(RMS)(A) 8 7 7 6 6 5 5 TO-220AB (Insulated) 4 4 3 TO-251/TO-252 TO-220AB 3 2 2 1 1 TC(°C) IT(RMS)(A) 0 0 0 1 2 3 4 5 6 0 25 50 75 100 125 Fig.4 On-state characteristics (maximum values). Fig.3 Relative variation of thermal impedance versus pulse duration. ITM(A) K=[Zth /Rth] 100 1E+0 Tj = Tj max. Tj max. Vt0 = 0.85V Rd = 60 mΩ Zth(j-c) Zth(j-a) 10 1E-1 tp(s) VTM(V) 1E-2 1 1E-3 1E-2 www.nellsemi.com 1E-1 1E+0 1E+1 1E+2 5E+2 Page 4 of 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RoHS 6T Series RoHS SEMICONDUCTOR Fig.5 Surge peak on-state current versus number of cycles. Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. ITSM(A) 2 2 ITSM(A), I t (A s) 70 1000 Tj initial=25°C 60 t=20ms 50 One cycle dI/dt limitation: 50A/µs Non repetitive Tj initial=25°C 40 ITSM 100 30 Repetitive Tc =105°C 20 I2t 10 Number of cycles 0 tp(ms) 10 1 10 100 1000 0.01 IGT,IH,IL [Tj ] / IGT,IH,IL [Tj =25 °C ] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0 IGT 1.5 IH& IL 1.0 0.5 Tj(°C) 0.0 0 20 40 60 10.00 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 -20 1.00 Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). -40 0.10 80 100 120 TW BW/CW SW (dV/dt)c (V/µs) 0.1 140 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)C (typical values) (Standard types). 1.0 10.0 100.0 Fig.10 Relative variation of critical rate decrease of main current versus junction temperature . (dI/dt)c [Tj ] / (dI/dt)c [T j specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.0 1.8 5 1.6 C 1.4 4 1.2 B 3 1.0 0.8 2 0.6 0.4 1 0.2 (dV/dt)c (V/µs) Tj(°C) 0.0 0 0.1 www.nellsemi.com 1.0 10.0 100.0 Page 5 of 6 0 25 50 75 100 125 RoHS 6T Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 4.57(0.180) www.nellsemi.com Page 6 of 6 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) RoHS