5 1N4001G THRU 1N4007G.cdr

1N4001GTHRU 1N4007G
R
GENERAL PURPOSE PLASTIC RECTIFIER
FEATURES
DO-41
Glass passivated cavity-free junction
Capable of meeting environmental standards of MIL-S-19500
1.0(25.4)
MIN
1.0Ampere operation at Ta=75℃ and 55℃ with no thermal runaway
Typical IR less than 0.1uA
0.107(2.7)
0.080(2.0)
DIA
High temperature soldering guaranteed:260℃/10 seconds at terminals
Plastic Package has Under writers Laboratory Flammability Classtification 94V-0
Component in accordance to RoHs 2002/95/EC and WEEE 2002/96/EC
0.205(5.20)
0.180(4.10)
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012ounce, 0.33 gram
1.0(25.4)
MIN
0.034(0.85)
0.024(0.62)
DIA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified )
Symbols
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
Unis
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
Maximum average Forward Rectified Current
0.375"(9.5mm) lead length at TA=75 C
I(AV)
1.0
Amp
Peak Forward Surge Current (8.3ms half sinewave superimposed on rated load
(JEDEC method) TA=75 C
IFSM
30.0
Amps
Maximum Instantaneous Forward Voltage
at 1.0 A
VF
1.0
Volts
Maximum Reverse
current at rated DC Blocking
Voltage
IR
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
TA =25°C
TA =150°C
Typical Thermal resistance (Note 2)
R
Typical Junction Capacitance(Note 1)
CJ
Operating and Storage temperature Range
TJ
TSTG
5.0
A
250.0
JA
Volts
Volts
Volts
65.0
°C/W
10.0
PF
-65 to+150
°C
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V DC.
2.Mount on Cu-Pad Size 5mm
JINAN JINGHENG ELECTRONICS CO., LTD.
5mm on P.C.B.
2-1
HTTP://WWW.JINGHENGGROUP.COM
REV:A
DATE:2014-01-14
SILICON
RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current -1.0Ampere
S E M I C O N D U C T O R
SILICON
RECTIFIER
RATINGS AND CHARACTERISTIC CURVES 1N4001G THRU 1N4007G
FIG.2-TYPICAL FORWARD CHARACTERISTICS
1.25
1.00
INSTANTANEOUS FORWARD CURRENT( AMPERES)
AVERAGE FORWARD CURRENT (AMPERES)
FIG.1-FORWARD CURRENT DERATING CURVE
0.75
0.50
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.25
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
20
10
1
TJ=25°C
PULSE WIDTH=300 S
1% DUTY CYCLE
0.1
0.01
FIG.3-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
0.6
0.8
1.0
1.2
1.4
1.5
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
40
30
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
INSTANTANEOUS REVERSE CURRENT ( A)
PEAK FORWARD SURGE
CURRENT(AMPERES)
50
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
100
10
TJ=100°C
1.0
0.1
TJ=25°C
0.01
0
20
40
60
80
100
120
TJ=25°C
PERCENT OF RATED PEAK REVERSE VOLTAGE %
10
1
0.1
1
10
100
REVERSE VOLTAGE. (VOLTS)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
HTTP://WWW.JINGHENGGROUP.COM
REV:A
DATE:2014-01-14
140