RENESAS 2SB1079

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SB1079
Silicon PNP Triple Diffused
ADE-208-866 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SD1559
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2
1 kΩ
(Typ)
400 Ω
(Typ)
3
3
2SB1079
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–100
V
Collector to emitter voltage
VCEO
–100
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–20
A
Collector peak current
I C(peak)
–30
A
Base current
IB
–3
A
100
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–100
—
—
V
I C = –0.1 mA, IE = 0
Collector to emitter breakdown V(BRCEO
voltage
–100
—
—
V
I C = –25 mA, RBE = ∞
Collector to emitter sustain
voltage
VCEO(sus)
–100
—
—
V
I C = –200 mA, RBE = ∞*1
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
I E = –50 mA, IC = 0
Collector cutoff current
I CBO
—
—
–100
µA
VCB = –100 V, IE = 0
I CEO
—
—
–1.0
mA
VCE = –80 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
voltage
VCE(sat)1
—
—
–2.0
V
Base to emitter saturation
voltage
VBE(sat)1
—
—
–2.5
V
Collector to emitter saturation
voltage
VCE(sat)2
—
—
–3.0
V
Base to emitter saturation
voltage
VBE(sat)2
—
—
–3.5
V
Turn on time
t on
—
0.6
—
µs
Storage time
t stg
—
3.5
—
µs
Note:
2
1. Pulse Test.
VCE = –3 V, IC = –10 A*1
I C = –10 A, IB = –20 mA*1
I C = –20 A, IB = –200 mA*1
I C = –10 A, IB1 = –IB2 = –20 mA
2SB1079
Maximum Collector Dissipation
Curve
Area of Safe Operation
80
C
–10
100 µs
T
C
=2
5°C
s
Ta = 25°C
1 Shot Pulse
0m
–1.0
s
–3
–0.3
0
50
100
Case temperature TC (°C)
–0.1
–3
150
30000
–20
–3.5
–3
–4
–2.5
–2
–1.5
–12
–1
–8
IB = –0.5 mA
–4
0
TC = 25°C
–2
–1
–3
–4
–5
Collector to emitter voltage VCE (V)
DC current transfer ratio hFE
–16
–10
–30
–100
–300
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
Collector current IC (A)
1 µs
iC(peak)
IC(max) D
1m
40
–30
=1
Collector current IC (A)
–100
PW
Collector power dissipation PC (W)
120
10000
3000
5°C
=7
Ta 25°C
°C
–25
1000
300
100
30
–0.3
VCE = –3 V
Pulse
–1.0
–3
–10
Collector current IC (A)
–30
3
2SB1079
Switching Time vs. Collector Current
–10
10
200
–3
–1.0
–0.3
500
VCE(sat)
IC/IB = 200
Ta = 25°C
Pulse
–0.1
tf
1.0
ton
0.3
0.1
VCC = –30V
IC = 500/B1 = –500/B2
Ta = 25°C
0.03
–0.03
–0.01
–0.3
tstg
3
500
VBE(sat)
Switching time t (µs)
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
Saturation Voltage vs.
Collector Current
–1.0
–3
–10
Collector current IC (A)
0.01
0.3
–30
1.0
3
10
Collector current IC (A)
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
3
0.1–100 s
1.0
0.3
0.1–100 ms
0.1
TC = 25°C
1 Shot
0.03
0.01
0.1
1.0
0.1
1.0
Time t
4
10
100 (s)
10
100 (ms)
30
2SB1079
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
5