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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1079 Silicon PNP Triple Diffused ADE-208-866 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 1 kΩ (Typ) 400 Ω (Typ) 3 3 2SB1079 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –7 V Collector current IC –20 A Collector peak current I C(peak) –30 A Base current IB –3 A 100 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –100 — — V I C = –0.1 mA, IE = 0 Collector to emitter breakdown V(BRCEO voltage –100 — — V I C = –25 mA, RBE = ∞ Collector to emitter sustain voltage VCEO(sus) –100 — — V I C = –200 mA, RBE = ∞*1 Emitter to base breakdown voltage V(BR)EBO –7 — — V I E = –50 mA, IC = 0 Collector cutoff current I CBO — — –100 µA VCB = –100 V, IE = 0 I CEO — — –1.0 mA VCE = –80 V, RBE = ∞ DC current transfer ratio hFE 1000 — 20000 Collector to emitter saturation voltage VCE(sat)1 — — –2.0 V Base to emitter saturation voltage VBE(sat)1 — — –2.5 V Collector to emitter saturation voltage VCE(sat)2 — — –3.0 V Base to emitter saturation voltage VBE(sat)2 — — –3.5 V Turn on time t on — 0.6 — µs Storage time t stg — 3.5 — µs Note: 2 1. Pulse Test. VCE = –3 V, IC = –10 A*1 I C = –10 A, IB = –20 mA*1 I C = –20 A, IB = –200 mA*1 I C = –10 A, IB1 = –IB2 = –20 mA 2SB1079 Maximum Collector Dissipation Curve Area of Safe Operation 80 C –10 100 µs T C =2 5°C s Ta = 25°C 1 Shot Pulse 0m –1.0 s –3 –0.3 0 50 100 Case temperature TC (°C) –0.1 –3 150 30000 –20 –3.5 –3 –4 –2.5 –2 –1.5 –12 –1 –8 IB = –0.5 mA –4 0 TC = 25°C –2 –1 –3 –4 –5 Collector to emitter voltage VCE (V) DC current transfer ratio hFE –16 –10 –30 –100 –300 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics Collector current IC (A) 1 µs iC(peak) IC(max) D 1m 40 –30 =1 Collector current IC (A) –100 PW Collector power dissipation PC (W) 120 10000 3000 5°C =7 Ta 25°C °C –25 1000 300 100 30 –0.3 VCE = –3 V Pulse –1.0 –3 –10 Collector current IC (A) –30 3 2SB1079 Switching Time vs. Collector Current –10 10 200 –3 –1.0 –0.3 500 VCE(sat) IC/IB = 200 Ta = 25°C Pulse –0.1 tf 1.0 ton 0.3 0.1 VCC = –30V IC = 500/B1 = –500/B2 Ta = 25°C 0.03 –0.03 –0.01 –0.3 tstg 3 500 VBE(sat) Switching time t (µs) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current –1.0 –3 –10 Collector current IC (A) 0.01 0.3 –30 1.0 3 10 Collector current IC (A) Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 0.1–100 s 1.0 0.3 0.1–100 ms 0.1 TC = 25°C 1 Shot 0.03 0.01 0.1 1.0 0.1 1.0 Time t 4 10 100 (s) 10 100 (ms) 30 2SB1079 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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