Transistors SMD Type NPN Transistors 2SC5338 SOT-89 Unit:mm 1.70 0.1 4 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 Emitter - Base Voltage VEBO 2.5 IC 150 mA PC 1.8 W TJ 150 Tstg -65 to 150 Collector Current - Continuous Collector Power Dissipation (Note.1) Junction Temperature Storage Temperature Range Unit V ℃ Note.1 :0.7 mmX16 cm2 double sided ceramic substrate (Copper plating) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 12 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 2.5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 2V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.5 Base - emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 1.2 DC current gain Noise Figure 3rd Order Intermoduration Distortion Collector output capacitance Transition frequency 50 |S21e| VCE= 5V,IC=50mA, f=1GHz 8.5 NF VCE= 5V,IC=50mA, f=1GHz IM2 IC = 50mA Vin = 105dB uV/75 Ω f = 190MHz - 90 MHz -55 IM3 IC = 50mA Vin = 105dB uV/75 Ω f = 2X190MHz - 200 MHz -76 Cob VCB= 5 V,IE=0, f=1MHz 2 Insertion Power Gain 2nd Order Intermoduration Distortion VCE= 5V, IC=50mA hFE VCE=5V VCE=10V VCE=5V VCE=10V fT VCE= 5V, IC=50mA Unit uA V 250 3.5 dB -63 -83 2 6 pF GHz Note.Pulse measurement: PW ≤ 350 uS, Duty Cycle ≤ 2 % www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC5338 ■ Classification of hfe Type 2SC5338-H 2SC5338-F 2SC5338-E Range 50-100 80-160 125-250 Marking SH SF SE ■ Typical Characterisitics IC - VCE Characteristics IC - VBE Characteristics 1000 IB = 0.7 mA 100 0.6 0.5 80 0.4 60 0.3 40 0.2 20 0 IC - Collector Current - mA IC - Collector Current - mA 120 VCE = 10 V 100 5V 10 1 0.1 2 4 6 8 10 12 0.1 0.2 14 VCE - Collector to Emitter Voltage - V 0.4 5.0 Cre - Feed-back Capacitance - pF hFE - DC Current Gain VCE = 10 V 100 5V 50 1 10 100 IC - Collector Current - mA www.kexin.com.cn 1.0 1.2 Cob - VCB Characteristics hFE - IC Characteristics 2 0.8 VBE - Bese to Emitter Voltage - V 500 10 0.1 0.6 1000 f = 1.0 MHZ 3.0 2.0 1.0 0.5 0.3 1 3 5 10 VCB - Collector to Base Voltage - V 20 30 Transistors SMD Type NPN Transistors 2SC5338 ■ Typical Characterisitics IM3 - IC Characteristics VO = 105 dB µ V/75 Ω f = 190 MHZ – 90 MHZ –60 VCE = 10 V –50 5V –40 10 20 50 100 200 IM3 - 3rd Order Intermoduration Distortion - dB IM2 - 2nd Order Intermoduration Distortion - dB IM2 - IC Characteristics –70 –90 VO = 105 dB µ V/75 Ω f = 2 × 190MHz – 200 MHZ –80 VCE = 10 V –70 –60 5V –50 10 20 IC - Collector Current - mA 200 NF - IC Characteristics 7 VCE = 5 V VCE = 10 V f = 1 GHZ VCE = 5 V f = 1 GHZ 6 10 5 NF - Noise Figure - dB S21e 2 - Insertion Power Gain - dB 100 IC - Collector Current - mA S21e 2 - IC Characteristics 5 0 50 5 7 10 20 50 70 100 IC - Collector Current - mA 4 3 2 1 0 1 3 5 10 20 50 100 IC - Collector Current - mA www.kexin.com.cn 3