MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 NC 1 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 1703 2 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 2 3 3 1704 2 3 1 2 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 20 V IO Average Rectified Current 50 mA IF DC Forward Current 150 mA if Recurrent Peak Forward Current 150 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range 250 -55 to +150 mA °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units MMBD1701/A /1703/A-1705/A* 350 2.8 357 mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 1997 Fairchild Semiconductor Corporation MMBD1700 Rev. B MMBD1701/A / 1703/A / 1704/A / 1705/A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions BV Breakdown Voltage IR = 5.0 µA IR Reverse Current VR = 20 V VF Forward Voltage CO Diode Capacitance IF = 10 µA IF = 100 µA IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f = 1.0 MHz TRR Reverse Recovery Time MMBD1701-1705 MMBD1701A-1705A Min Max Units 50 nA 500 610 740 880 950 1.1 1.0 mV mV mV mV mV V pF 700 pS 1.0 nS 30 420 520 640 760 810 0.89 IF = IR = 10 mA IRR = 1.0 mA, RL = 100Ω IF = IR = 10 mA IRR = 1.0 mA, RL = 100Ω V Typical Characteristics 60 10 Ta= 25°C 50 40 1 2 3 5 10 20 30 IR - REVERSE CURRENT (uA) 50 100 Ta= 25°C 550 500 450 400 350 300 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Ta= 25°C 5 0 1 2 3 5 10 VR - REVERSE VOLTAGE (V) 20 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F - FORWARD VOLTAGE (mV) V F - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 600 REVERSE CURRENT vs REVERSE VOLTAGE IR - 1 to 22 V IIRR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 850 Ta= 25°C 800 750 700 650 600 550 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode (continued) Typical Characteristics (continued) Ta= 25°C 1 CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 10 20 30 50 100 I F - FORWARD CURRENT (mA) PD - POWER DISSIPATION (mW) 250 P D 200 I 150 100 R -P OW ER DI -C SS ON IPA TIN OU TI ON SF OR -m WA W RD CU RR EN T -m Io - AVER A AGE R ECTIFIED CURREN T - mA 50 0 25 50 75 100 125 150 o T A- AMBIENT TEMPERATURE ( C) 175 Ta= 25°C 0.9 0.8 0.7 0.6 0.5 200 Power Dissipation, Average Rectified Current (Io), Forward Current (I F) & Ambient Temperature (TA ) 0 CAPACITANCE vs REVERSE CURRENT VR - 0 to 15 V 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 Power Derating Curve PD - POWER DISSIPATION (mW) V F - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 200 mA 350 300 250 SOT-23 200 DO-7 150 100 50 0 0 25 50 75 100 125 150 Io - AVERAGE TEMPERATURE 175 200 MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode