BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C 150 °C Tstg TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BAV99 350 2.8 357 mW mW/°C °C/W BAV99 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units BV Breakdown Voltage I R = 100 µA IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz 2.5 30 50 715 855 1.0 1.25 1.5 µA µA µA mV mV V V pF TRR Reverse Recovery Time 6.0 nS VFM Peak Forward Voltage I F = IR = 10 mA, IRR = 1.0 mA, RL = 100Ω I F = 10 mA, tr = 20 nS 1.75 V 70 V Typical Characteristics 150 Ta= 25°C 140 130 120 110 1 2 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 400 350 300 250 225 3 5 10 20 30 I FIF - FORWARD CURRENT (uA) 50 250 200 150 100 50 0 10 100 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA VVFF - FORWARD VOLTAGE (mV) VVFF - FORWARD VOLTAGE (mV) 485 Ta= 25°C 450 2 300 Ta= 25°C 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 1 1N4150 MMBD1201 1205 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) VRR - REVERSE VOLTAGE (V) V 50 0 05 REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 725 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 IF - FORWARD CURRENT (mA) 10 BAV99 High Conductance Ultra Fast Diode (continued) Typical Characteristics (continued) 1.5 1.4 CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V Ta= 25°C 1.3 CAPACITANCE (pF) VFF - FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA 1.2 1 0.8 0.6 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 1.2 1.1 1 500 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 PD - POWER DISSIPATION (mW) Ta= 25°C IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms 2 4 6 8 10 REVERSE VOLTAGE (V) 500 IR 400 -F OR WA R 300 200 100 0 0 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 D CU R RE NT ST EA D 50 100 150 TA - AMBIENT TEMPERATURE ( o C) POWER DERATING CURVE 400 12 Y Io - A ST VERA AT GE R E ECTIF -m IE D C A URR E NT - mA 500 P PDD - POWER DISSIPATION (mW) REVERSE RECOVERY (nS) 4 0 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA 3.5 Ta= 25°C 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 14 15 BAV99 High Conductance Ultra Fast Diode