MOSFET DIP Type N-Channel MOSFET KX10N60F TO-220F Unit: mm ±0.20 ±0.20 18 0 .2 ±0 2.54 ±0.20 0.70 ±0.20 3. 15.87 ±0.20 12.42 ±0.20 ● VDS (V) = 600V 3.30 ±0.20 ■ Features 6.68 ±0.20 φ ● ID = 10 A (VGS = 10V) ● RDS(ON) ＜ 730mΩ (VGS = 10V) 1 ● Qg(typ.)= 29.5nC 2 2.76 ±0.20 3 9.75 ±0.20 1.47max D 0.50 ±0.20 0.80 ±0.20 2.54typ 2.54typ G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Tc=25℃ Continuous Drain Current Pulsed Drain Current ID Tc=70℃ (Note.1) IDM Tc=25℃ Power Dissipation Repetitive Avalanche Energy Derate above 25℃ (Note.2) PD 6 A 25 46 W 0.37 W/℃ EAR 16.5 (Note.1) EAS 400 Peak Diode Recovery dv/dt (Note.3) dv/dt 4.5 Thermal Resistance.Junction- to-Ambient RthJA 62.5 Thermal Resistance.Junction- to-Case RthJC 2.7 TJ 150 Tstg -55 to 150 Junction Temperature V 10 Single Pulsed Avalanche Energy Storage Temperature Range Unit mJ V/ns ℃/W ℃ Note.1: L =5.5mH, IS=10A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note.2: Repetivity rating : Pulse width limited by junction temperature. Note.3: IS≤10A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. www.kexin.com.cn 1 MOSFET DIP Type N-Channel MOSFET KX10N60F ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit 600 V Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=5A Input Capacitance Ciss 2.5 VGS=0V, VDS=25V, f=1MHz Output Capacitance Coss Crss 13 Total Gate Charge Qg 26 VGS=10V, VDS=480V, ID=10A (Note.1) Qgd 10 Turn-On DelayTime td(on) 32 tr Turn-Off Fall Time 35 VDS=300V, ID=10A,RG=25Ω (Note.1) 30 Body Diode Reverse Recovery Time trr IF= 10A,VGS=0,dI/dt= 100A/μs 350 Body Diode Reverse Recovery Charge Qrr IF= 5A, dI/dt= 100A/μs 4.2 Continuous Source Current IS ISM Diode Forward Voltage VSD ns 88 tf Pulsed Source Current nC 6 Qgs Gate Drain Charge td(off) pF 140 Gate Source Charge Turn-Off DelayTime V Ω 1350 Reverse Transfer Capacitance Turn-On Rise Time 4.5 0.73 nC 10 VGS<Vth A 40 IS=10A,VGS=0V 1.4 V Note.1:Pulse Test : Pulse width ≤ 300 us, Duty Cycle ≤ 2%. ■ Typical Characterisitics Fig1. ID - VDS Fig2. ID - VGS VDS=30V VGS=10V VGS=7V 10 VGS=5V 1 0.1 0.1 1 10 Drain - Source Voltage VDS (V) 2 www.kexin.com.cn 100 Drain Current ID (A) Drain Current ID (A) 100 10 1 10 10 100 C 0 25 C -1 2 4 6 8 Gate - Source Voltage VGS (V) 10 MOSFET DIP Type N-Channel MOSFET KX10N60F ■ Typical Characterisitics 1.2 Fig4. RDS(ON) - ID 2.4 VGS = 0V IDS = 250 On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj 1.1 1.0 0.9 0.8 -100 0 -50 100 50 2.0 1.6 1.2 VGS=6V 0.8 VGS=10V 0.4 0 0 150 5 Junction Temperature Tj ( C ) 2 3.0 25 C Normalized On Resistance Reverse Drain Current IS (A) 100 C 1 10 0 10 0.8 1.0 1.2 1.4 2.5 VGS =10V IDS = 5A 2.0 1.5 1.0 0.5 0.0 -100 -1 0.6 1.8 -50 Source - Drain Voltage VSD (V) 0 Ciss 103 Coss 102 Crss 20 30 Drain - Source Voltage VDS (V) 40 Gate - Source Voltage VGS (V) Capacitance (pF) 12 10 100 150 Fig8. Qg- VGS 104 0 50 Junction Temperature Tj ( C) Fig 7. C - VDS 101 20 Fig6. RDS(ON) - Tj 10 0.4 15 Drain Current ID (A) Fig5. IS - VSD 10 10 ID=10A VDS = 480V 10 VDS = 300V 8 VDS = 120V 6 4 2 0 0 5 10 15 20 25 30 35 40 Gate - Charge Qg (nC) www.kexin.com.cn 3 MOSFET DIP Type N-Channel MOSFET KX10N60F ■ Typical Characterisitics Fig10 ID - Tj Fig9. Safe Operation Area 14 102 Drain Current ID (A) Drain Current ID (A) 12 101 10µs 100µs 100 10-1 2 1ms Operation in this area is limited by RDS(ON) 10ms DC Tc= 25 C Tj = 150 C Single pulse 10 100 10 1 10 2 10 4 10 0 25 3 . 50 75 100 125 Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve 101 Transient Thermal Resistance 6 2 Drain - Source Voltage VDS (V) Duty=0.5 100 0.2 0.1 PDM 0.05 10-1 t1 0.02 t2 0.01 10-2 10-5 - Duty Factor, D= t1/t2 Single Pulse 10-4 10-3 10-2 TIME (sec) 4 8 www.kexin.com.cn 10-1 100 101 150