SEMICONDUCTOR KF50N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies. A O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B B Q C I D E FEATURES K P VDSS = 60V, ID = 50A M L Drain-Source ON Resistance : H J RDS(ON) =17m (Max.) @VGS = 10V F G I D J N Qg(typ.) = 39.5nC H N K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + M N MOSFET MAXIMUM RATING (Ta=25 CHARACTERISTIC Unless otherwise noted) SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V @TC=25℃ Drain Current @TC=100℃ 32 EAS 330 mJ EAR 9 mJ dv/dt 4.5 V/ns 96 W 0.77 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 1.3 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 ℃/W Drain Power Dissipation Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB A 170 Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 2 50 I D* IDP Pulsed (Note1) O 1 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + Thermal Characteristics * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2009. 5. 6 Revision No : 0 1/6 KF50N06P ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 60 - - V ID=250μA, Referenced to 25℃ - 0.08 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2 - 4 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=25A - 14.2 17.0 mΩ - 39.5 - - 8 - - 16 - - 30 - - 100 - - 80 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=48V, ID=50A VGS=10V (Note4,5) VDD=30V ID=50A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 64 - Input Capacitance Ciss - 1560 - Output Capacitance Coss - 405 - Reverse Transfer Capacitance Crss - 76 - - - 50 - - 200 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=50A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=50A, VGS=0V, - 72 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 185 - nC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =132μH, IS=50A, VDD=30V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤50A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KF50N06 901 P 2009. 5. 6 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/6 KF50N06P Fig1. ID - VDS Fig2. ID - VGS 1000 Drain Current ID (A) Drain Current ID (A) 1000 VGS=10V 100 VGS=7V VGS=5V 10 1 0.1 10 1 100 100 C 25 C 10 1 100 VDS = 20V 2 10 Fig4. RDS(ON) - ID 1.2 28 VGS = 0V IDS = 250 On - Resistance RDS(ON) (mΩ) Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj 1.1 1.0 0.9 0.8 -50 0 100 50 25 22 19 VGS=7V 16 VGS=10V 13 10 0 150 10 20 Junction Temperature Tj ( C ) 2.6 Normalized On Resistance 25 C 10 1 0.4 0.6 0.8 1 1.2 Source - Drain Voltage VSD (V) Revision No : 0 40 50 60 70 80 100 125 150 Fig6. RDS(ON) - Tj 100 100 C 30 Drain Current ID (A) Fig5. IS - VSD Reverse Drain Current IS (A) 8 Gate - Source Voltage VGS (V) Drain - Source Voltage VDS (V) 2009. 5. 6 6 4 1.4 2.2 VGS =10V ID = 25A 1.8 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 Junction Temperature Tj ( C) 3/6 KF50N06P Fig 8. Qg - VDS Fig 7. C - VDS 10 Gate - Source Voltage VGS (V) Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss 10 5 10 15 20 25 30 4 2 0 40 10 0 30 20 Gate - Charge Qg (nC) Fig 9. Safe Operation Area Fig 10. ID - TC (KF50N06P) 100µs R DS(O N) ited Lim 40 60 10µs 100 10 VDS=48V 6 Drain - Source Voltage VDS (V) 1000 Drain Current ID (A) 35 Drain Current ID (A) 0 8 1ms 10ms 100ms DC 1 50 40 30 20 10 0 0.1 0.1 10 1 0 100 25 Drain - Source Voltage VDS (V) 50 75 100 125 150 175 Case Temperature TC ( C) Transient Thermal Impedance [ C / W] Fig 11. Rth of KF50N06P 10 1 Duty=0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 0.01 t2 - Duty Factor, D= t1/t2 - RthJC = Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 Square Wave Pulse Duration (sec) 2009. 5. 6 Revision No : 0 4/6 KF50N06P Fig12. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2009. 5. 6 VGS Revision No : 0 td(on) ton tr td(off) tf toff 5/6 KF50N06P Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.5 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2009. 5. 6 VGS Revision No : 0 Body Diode Forword Voltage drop 6/6