MOSFET SMD Type P-Channel MOSFET NDT2955 (KDT2955) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 4 ● ID =-2.5 A (VGS =-10V) 3.50±0.2 7.0±0.3 ● VDS (V) =-60V ● RDS(ON) ＜ 300mΩ (VGS =-10V) 1 ● RDS(ON) ＜ 500mΩ (VGS =-4.5V) 2 3 D 0.250 2.30 (typ) Gauge Plane G D 0.02 ~ 0.1 1.80 (max) 1.Gate 2.Drain S 0.70±0.1 4.60 (typ) 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 ID -2.5 IDM -15 Continuous Drain Current (Note.1) Pulsed Drain Current (Note.1) Power Dissipation (Note.2) (Note.1) PD 1.3 A W 1.1 RthJA 42 RthJC 12 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Case V 3 (Note.3) Thermal Resistance.Junction- to-Ambient Unit ℃/W ℃ Note.1: 42°C/W when mounted on a 1in 2 pad of 2 oz copper Note.2: 95°C/W when mounted on a .0066 in 2 pad of 2 oz copper Note.3: 110°C/W when mounted on a minimum pad. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET NDT2955 (KDT2955) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol Test Conditions VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V Gate-Body leakage current IGSS VDS=0V, VGS=±20V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Min Typ -60 -2 VGS=-10V, ID=-2.5A Static Drain-Source On-Resistance On state drain current Forward Transconductance RDS(On) Ciss Reverse Transfer Capacitance Crss -4 V 300 TJ=125℃ -12 5.5 S 601 VGS=0V, VDS=-30V, f=1MHz pF 85 35 11 Qg Gate Source Charge Qgs Gate Drain Charge Qgd 2.7 VGS=-10V, VDS=-30V, ID=-2.5A (Note.1) 15 nC 2.4 Turn-On DelayTime td(on) 12 21 Turn-On Rise Time tr 10 20 Turn-Off DelayTime td(off) 19 34 12 VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω (Note.1) Turn-Off Fall Time tf 6 Body Diode Reverse Recovery Time trr 25 Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current Diode Forward Voltage W DSS IF=-2.5A, dI/dt=100A/μs Single Pulse, VDD = 30 V, ID = 2.5 A IS VSD IS=-2.5A,VGS=0V (Note.1) Note.1: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% ■ Marking Marking * DT2955 www.kexin.com.cn mΩ A Total Gate Charge Drain-Source Avalanche Energy 2 ±100 VGS=-10V, ID=-2.5A VDS=-10V, ID=-2.5A Coss uA nA 500 gFS Input Capacitance -10 513 VGS=-10V, VDS=-5V Unit V VGS=-4.5V, ID=-2A ID(ON) Output Capacitance Max 40 ns nC 174 mJ -2.5 A -1.2 V MOSFET SMD Type P-Channel MOSFET NDT2955 (KDT2955) ■ Typical Characterisitics 2 VGS = -10V -6.0V -7.0V 9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 12 -5.0V 6 -4.5V 3 -4.0V VGS=-4.5V 1.8 1.6 -5.0V 1.4 -6.0V 1.2 -7.0V 0 1 2 3 4 0 5 3 6 9 12 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 1.8 ID = -1.3A ID = -2.5A VGS = -10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1 0.8 0 1.4 1.2 1 0.8 0.6 0.3 0.25 TA = 125oC 0.2 0.15 TA = 25oC 0.1 0.05 0.4 -50 -25 0 25 50 75 100 125 2 150 4 Figure 3. On-Resistance Variation withTemperature. TA = -55oC VDS = -10V 8 10 25oC 125oC 6 4 2 0 2.5 3.5 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. -IS, REVERSE DRAIN CURRENT (A) 10 6 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) -ID, DRAIN CURRENT (A) -8.0V 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 VGS =0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET NDT2955 (KDT2955) ■ Typical Characterisitics 800 VDS = -20V ID = -2.5A 8 -30V -40V 6 4 2 600 400 COSS 200 CRSS 0 0 0 3 6 9 12 0 15 Qg, GATE CHARGE (nC) 30 45 60 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 100 s 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s 1 VGS = -10V SINGLE PULSE R JA = 110oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE R JA = 110°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE . 1 D = 0.5 R 0.1 JA 0.05 JA o P(pk) 0.02 0.01 = r(t) * R = 110 C/W 0.1 t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 0.001 0.0001 SINGLE PULSE 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 JA(t) R 0.2 www.kexin.com.cn 100 1000