BAS21,A,C,S

Diodes
SMD Type
Switching Diodes
BAS21,A,C,S
(KAS21,A,C,S)
SOT-23-3
Unit: mm
Features
Fast Switching Speed
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
For General Purpose Switching Applications
1
0.55
High Conductance
+0.2
1.6 -0.1
+0.2
2.8 -0.1
Surface Mount Package Ideally Suited for Automatic Insertion
2
+0.02
0.15 -0.02
BAS21C
0-0.1
BAS21A
BAS21
+0.1
0.68 -0.1
1.1
+0.2
-0.1
+0.1
0.95 -0.1
+0.1
1.9 -0.2
BAS21S
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VR
250
V
Forward Current
IF
200
mA
Power Dissipation
PD
200
mW
Operating Junction Temperature Range
TJ
-55 to +150
Tstg
-55 to +150
Reverse V oltage
Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Symbol
Reverse Breakdown Voltage
V(BR)
Testconditions
IR=100
Min
Typ
Max
250
A
Unit
V
IF=100mA
1.0
IF=200mA
1.25
IR
VR=200V
100
nA
J u n c tio n C a p ac it anc e
Cj
VR=0V, f=1.0MHz
5.0
pF
R e v e r s e Re c o v e r T i m e
Trr
50
nS
Forward Voltage
VF
Reverse Leakage
V
Marking
NO.
BAS21
BAS21A
BAS21C
BAS21S
Marking
JS
JS2
JS3
JS4
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Diodes
SMD Type
BAS21,A,C,S
(KAS21,A,C,S)
■ Typical Characterisitics
600
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
100
200
0
0
100
Tamb (oC)
0
200
0
1
(2)
(3)
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.1
(1)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.2
Forward current as a function of forward
voltage.
102
handbook, full pagewidth
IFSM
(A)
10
1
10 -1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2
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104
Diodes
SMD Type
BAS21,A,C,S
(KAS21,A,C,S)
■ Typical Characterisitics
102
1.0
handbook, halfpage
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
(2)
0.6
1
10
10 2
0.4
0
100
Tj (oC)
200
0.2
0
2
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
4
6
VR (V)
8
Diode capacitance as a function of reverse
voltage; typical values.
300
handbook, halfpage
VR
(V)
200
100
0
Fig.7
0
100
Tamb (oC)
200
Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
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