KEXIN KAV99

Diodes
SMD Type
High-Speed Double Diode
KAV99(BAV99)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
Repetitive peak forward current: max.450 mA.
0.55
High switching sped: max.4 ns.
+0.1
1.3-0.1
+0.1
2.4-0.1
Small plastic SMD package.
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Symbol
Rating
Unit
VRRM
85
V
Continuous reverse voltage
VR
75
V
Continuous forward current(single diode loaded *)
---------------------------------(double diode loaded *)
IF
215
125
mA
IFRM
450
mA
Repetitive peak forward current
Non-repetitive peak forward current Tj=25
t=1 s
t=1ms
3.collector
A
1
0.5
PD
250
mW
Thermal resistance from junction to tie-point
Rth j-tp
360
K/W
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
Tj
150
Tstg
-65 to +150
Junction Temperature
Storage Temperature Range
2.Emitter
4
IFSM
t=1s
power dissipation *
1.Base
* Device mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Testconditons
Max
Unit
IF =1 mA
715
mV
IF =10 mA
855
mV
IF =50 mA
1
V
IF =150 mA
1.25
V
VR =25 V
30
nA
VR =75 V
1
A
VR =25 V; Tj= 150
30
A
VR =75 V; Tj= 150
50
A
1.5
pF
4
nS
1.75
V
Diode capacitance
Cd
VR =0 V, f= 1 MHz
Reverse recovery time
trr
when switched from IF= 10 mA to
IR=10mA;RL=100 ; measured at IR= 1mA
Forward recovery voltage
Vfr
IF = 10 mA, tr= 20 ns
Marking
Marking
A7
www.kexin.com.cn
1
Diodes
SMD Type
KAV99(BAV99)
Typical Characteristics
Device mounted on an FR4 printed-circuit board.
Fig.1Maximum permissible continuous forward
current as a function of ambient
(1) Tj = 150
; typical values.
(2) Tj = 25
; typical values.
(3) Tj = 25
; maximum values.
Fig.2 Forward current as a function of forward
voltage.
temperature.
Based on square wave currents.
Tj = 25
prior to surge.
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2
www.kexin.com.cn
Diodes
SMD Type
KAV99(BAV99)
f = 1 MHz; Tj = 25
Fig.4 Reverse current as a function of junction
temperature.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
www.kexin.com.cn
3