Product specification BAV23S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Switching speed: max. 50 ns 0.4 3 Small plastic SMD package 1 Continuous reverse voltage: max. 200 V 0.55 General application 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Repetitive peak reverse voltage: max. 250 V +0.05 0.1-0.01 2 1.Base 2.Emitter +0.1 0.38-0.1 1 0-0.1 +0.1 0.97-0.1 3 Repetitive peak forward current: max. 625 mA. 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Repetitive peak reverse voltage Rating Unit V RRM 250 V VR 200 V Continuous reverse voltage Continuous forward current (single diode loaded *) 225 IF (double diode loaded *) mA 125 Repetitive peak forward current I FRM 625 Non-repetitive peak forward current (Tj = 25 ℃) t=1us mA 9 t = 100us 3 IFSM t =10ms A 1.7 power dissipation (Tamb = 25 ℃ ) * PD 250 mW thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient * Rth j-a 500 K/W Storage temperature Tst g -65 to +150 ℃ 150 ℃ Junction temperature Tj * Device mounted on an FR4 printed-circuit board. ■ Electrical Characteristics Ta = 25℃ Parameter Forward voltage Symbol VF Reverse current IR Diode capacitance Cd Reverse recovery time trr http://www.twtysemi.com Max Unit IF = 100 mA Conditions 1.0 V IF = 200 mA 1.25 V VR = 200 V 100 nA VR = 200V; Tj = 150 ℃ 100 mA 5 pF 50 ns f = 1 MHz; V R = 0 V; when switched from IF =30 mA to IR = 30 mA; RL = 100Ω; measured at IR = 3 mA; [email protected] 4008-318-123 1 of 3 Product specification BAV23S Typical Characteristics 600 300 handbook, halfpage IF (mA) IF (mA) (1) (3) single diode loaded double diode loaded 200 100 0 0 0 100 o T amb ( C) 200 Fig.1 0 1 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Maximum permissible continuous forward current as a function of ambient temperature. Fig.2 VF (V) 2 Forward current as a function of forward voltage. 2 10halfpage handbook, handbook, halfpage IR (µA) Cd (pF) 1.0 0.8 10 (1) 1 10 (2) 400 200 (2) 0.6 1 0.4 10 2 0 100 Tj (oC) 0.2 0 200 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 Reverse current as a function of junction temperature. http://www.twtysemi.com [email protected] 2 4 6 VR (V) 8 Diode capacitance as a function of reverse voltage; typical values. 4008-318-123 2 of 3 Product specification BAV23S 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3