Transistors SMD Type NPN Transistors 2SD814A SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● Low noise voltage NV.. ● Complimentary to 2SB792A +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● High collector to emitter voltage VCEO. 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 185 Collector - Emitter Voltage VCEO 185 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 Collector Current - Pulse Icp 100 Collector Power Dissipation PC 200 Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 185 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 185 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 100 Emitter cut-off current IEBO VEB= 4V , IC=0 100 Unit V 5 nA Collector-emitter saturation voltage VCE(sat) IC=30 mA, IB=3mA 1 Base - emitter saturation voltage VBE(sat) IC=30 mA, IB=3mA 1.2 DC current gain hFE VCE= 5V, IC= 10mA Noise voltage NV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kW, Function = FLAT 150 mV Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 2.3 pF VCE= 10V, IE= -10mA,f=200MHz 150 MHz Transition frequency fT 90 V 330 ■ Classification of hfe Type 2SD814A-Q 2SD814A-R 2SD814A-S Range 90-155 130-220 185-330 Marking LQ LR LS www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD814A ■ Typical Characterisitics IC — VCE 200 100 160 120 80 40 Ta=25˚C 80 60 0.4mA 40 0.2mA 20 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (˚C) 0 2 10 3 1 Ta=75˚C –25˚C 0.03 0.3 1 3 10 30 100 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 www.kexin.com.cn 8 10 –25˚C 60 40 0 12 (V) 0 0.4 500 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.1 0.3 1 3 1.2 200 VCE=10V 300 0.8 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 10 30 Collector current IC (mA) Cob — VCB 5 6 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.01 0.1 4 Collector to emitter voltage VCE IC/IB=10 0.1 Ta=75˚C 80 hFE — IC 100 25˚C 25˚C 20 VCE(sat) — IC 0.3 VCE=10V 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA Transition frequency fT (MHz) 0 IC — VBE 120 Collector current IC (mA) 120 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 240 100 VCB=10V Ta=25˚C 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100