Transistors SMD Type NPN Transistors 2SC4643 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=9V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 400 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 15 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 9 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Typ Max Unit V 1.5 Collector-base cut-off current ICBO VCB= 12 V , IE= 0 1 uA Collector-emitter cut-off current ICEO VCE = 9 V, RBE = ∞ 1 mA Emitter cut-off current IEBO VEB= 1.5V , IC=0 10 uA Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.5 Base - emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.2 DC current gain hFE VCE= 5V, IC= 20mA 40 Power gain PG VCE= 5V,IC=20mA,f=900MHz 7.5 Noise figure NF VCE= 5V,IC=5mA,f=900MHz 2.5 Collector output capacitance Cob VCB= 5V,IE=0,f=1MHz 1.7 Transition frequency fT VCE= 5V, IC=20mA 5.5 V 250 dB pF GHz ■ Marking Marking DR www.kexin.com.cn 1