MOSFET SMD Type N-Channel MOSFET 2SK3434-ZJ ■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON) ＜ 20mΩ (VGS = 10V) ● RDS(ON) ＜ 31mΩ (VGS = 4V) ● Low Ciss: Ciss = 2100 pF TYP. Drain Body Diode Gate Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS 60 Gate-Source Voltage VGS ±20 ID 48 Continuous Drain Current Pulsed Drain Current (Note.1) IDM 192 Single Avalanche Current (Note.2) IAS 28 Tc = 25℃ Power Dissipation Ta = 25℃ 56 PD 1.5 EAS 78 Thermal Resistance.Junction- to-Ambient RthJA 83.3 Thermal Resistance.Junction- to-Case RthJC 2.23 TJ 150 Tstg -55 to 150 Single Avalanche Energy (Note.2) Junction Temperature Storage Temperature Range Unit V A W mJ ℃/W ℃ Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 % Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET 2SK3434-ZJ ■ Electrical Characteristics Ta = 25℃ Parameter Test Conditions Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate to Source Cut-off Voltage VGS(off) Static Drain-Source On-Resistance RDS(On) Forward Transconductance 2 Symbol gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V , ID=1mA Min Typ 1.5 VDS=10V, ID=24A 13 27 340 S pF 40 td(on) 40 tr 400 Turn-Off DelayTime td(off) www.kexin.com.cn mΩ 170 Turn-On Rise Time VSD V 2100 VGS=0V, VDS=10V, f=1MHz Turn-On DelayTime Diode Forward Voltage 2.5 31 Qgd Qrr uA 20 Gate Drain Charge Body Diode Reverse Recovery Charge ±10 VGS=10V, ID=24A Qg tf uA VGS=4V, ID=24A Qgs trr 10 V Total Gate Charge Body Diode Reverse Recovery Time Unit 60 Gate Source Charge Turn-Off Fall Time Max VGS=10V, VDS=48V, ID=48A 7 nC 11 VDD = 30V, ID = 24A, VGS(on)=10V, RG = 10 Ω 120 ns 160 IF= 48A, VGS=0, dI/dt= 100A/μs IF =48A,VGS=0V 43 61 nC 1 V