MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400) SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 0.4 3 (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 52m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = 2.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) 1 0.55 28m +0.1 1.3-0.1 RDS(ON) +0.1 2.4-0.1 ID = 5.8 A (VGS = 10V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-Source Voltage Parameter VDS 30 V Gate-Source Voltage VGS Continuous Drain Current TA=25 ID Power Dissipation IDM TA=25 PD V 5.8 4.9 TA=70 Pulsed Drain Current * 12 A 30 1.4 W 1 TA=70 Thermal Resistance.Junction- to-Ambient RthJA 85 /W Thermal Resistance.Junction- to-Case Rthc 43 /W TJ, TSTG -55 to 150 Junction and Storage Temperature Range * Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 IC MOSFET SMD Type KO3400(AO3400) Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Testconditons ID=250 Min On state drain current RDS(ON) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Unit V VDS=24V, VGS=0V 1 VDS=24V, VGS=0V ,TJ=55 5 A VDS=0V, VGS= 12V 100 0.7 nA 1.1 1.4 22.8 28 32 39 VGS=4.5V, ID=5A 27.3 33 m VGS=2.5V, ID=4A 43.3 52 m VDS=VGS ID=250 A VGS=10V, ID=5.8A TJ=125 VGS=4.5V, VDS=5V 30 VDS=5V, ID=5A 10 m A 15 823 S 1050 VGS=0V, VDS=15V, f=1MHz 99 VGS=0V, VDS=0V, f=1MHz 1.4 2 9.7 12 pF pF 77 VGS=4.5V, VDS=15V, ID=5.8A V pF nC Gate Source Charge Qgs 1.6 nC Gate Drain Charge Qgd 3.1 nC Turn-On DelayTime tD(on) 3.3 5 ns Turn-On Rise Time tr 4.8 7 ns Turn-Off DelayTime tD(off) 26.3 40 ns tf 4.1 6 ns Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/ s 16 20 ns Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/ s 8.9 12 nC Maximum Body-Diode Continuous Current IS 2.5 A Pulsed Body-Diode Current * ISM Diode Forward Voltage VSD IS=1A,VGS=0V * Repetitive rating, pulse width limited by junction temperature. 2 Max 30 A, VGS=0V VGS=10V, ID=5.8A Static Drain-Source On-Resistance Typ www.kexin.com.cn 0.71 30 A 1 V