MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 RDS(ON) 0.55 ID = 4 A +0.1 1.3-0.1 +0.1 2.4-0.1 VDS (V) = 30V 0.4 3 Features 0-0.1 +0.1 0.38-0.1 (VGS = 2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS Continuous Drain Current TA=25 ID Power Dissipation IDM TA=25 PD V 4 3.4 TA=70 Pulsed Drain Current 12 A 15 1.4 W 1 TA=70 Thermal Resistance.Junction-to-Ambient R JA 125 /W Thermal Resistance.Junction-to-Case R JC 80 /W Junction and Storage Temperature Range TJ, TSTG -55 to 150 www.kexin.com.cn 1 IC MOSFET SMD Type KO3402(AO3402) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=250 Min RDS(ON) 30 A, VGS=0V VDS=24V, VGS=0V ,TJ=55 5 VDS=0V, VGS= 100 A 12V VDS=VGS ID=250 0.6 A VGS=10V, ID=4A TJ=125 VGS=2.5V, ID=2A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=4.5V, VDS=5V 1 1.4 45 55 80 55 70 m 83 110 m VGS=0V, VDS=0V, f=1MHz m A 8 VGS=0V, VDS=15V, f=1MHz V 66 10 VDS=5V, ID=4A nA S 390 pF 54.5 pF 41 pF 3 VGS=4.5V, VDS=15V, ID=-4A 4.34 nC 0.6 nC Gate Drain Charge Qgd 1.38 nC Turn-On DelayTime tD(on) 3.3 ns Turn-On Rise Time tr 1 ns Turn-Off DelayTime VGS=10V, VDS=15V, RL=3.75 ,RGEN=6 tD(off) 21.7 ns Turn-Off Fall Time tf 2.1 ns Body Diode Reverse Recovery Time trr IF=4A, dI/dt=100A/ s 12 ns Body Diode Reverse Recovery Charge Qrr IF=4A, dI/dt=100A/ s 6.3 Maximum Body-Diode Continuous Current IS Diode Forward Voltage 2 ID(ON) Unit V 1 VGS=4.5V, ID=3A On state drain current Max VDS=24V, VGS=0V VGS=10V, ID=4A Static Drain-Source On-Resistance Typ www.kexin.com.cn VSD IS=1A,VGS=0V 0.8 nC 2.5 A 1 V