MOSFET IC SMD Type N-Channel Enhancement MOSFET SI2300 ( KI2300) SOT-23-3 Unit: mm Features @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 VDS=20V,RDS(ON)=60m 3 +0.2 1.6 -0.1 @VGS=4.5V,ID=5.0A +0.2 2.8 -0.1 VDS=20V,RDS(ON)=40m 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 ID 3.8 IDM 15 Continuous Drain Current Tj=125 ℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V A PD 1.25 W RthJA 100 ℃/W TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET IC SMD Type SI2300 ( KI2300) Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Max Unit Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 uA Gate-Body Leakage IGSS VGS= 100 nA Gate Threshold Voltage * VGS(th) Drain- Source on-state Resistance * 20 0.78 1.0 VGS=4.5V,ID=5.0A 32 40 m RDS(ON) VGS=2.5V,ID=4.0A 50 60 m 62 75 m ID(ON) Forward Transconductance * V 10V,VDS=0V VGS=VDS,ID=250uA 0.55 VGS=1.8V,ID=1.0A On-State Drain Current * gFS VDS=5V,VGS=4.5V 18 VDS=5V,ID=5A 5 V A S 888 pF 144 pF Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 pF Turn-On Delay Time tD(on) 31.8 ns 14.5 ns Rise Time tr Turn-Off Delay Time Total Gate Charge ns 31.9 ns Qg 16.8 nC 2.5 nC 5.4 nC Qgs Gate-Drain Charge Qgd VSD 300 s,Duty Cycle Marking Marking 00A* www.kexin.com.cn VDS = 10V, ID = 3.5A,VGS = 4.5V IS Diode Forward Voltage * Pulse Test:Pulse Width VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 50.3 Gate-S ource Charge Drain-Source Diode Forward Current * VDS = 15V, VGS = 0V,f =1.0MHZ tf tD(off) Fall Time 2 Typ 2% VGS=0V,IS=1.25A 0.825 1.25 A 1.2 V