SMD Type IC SMD Type MOSFET

MOSFET
IC
SMD Type
N-Channel Enhancement MOSFET
SI2300
( KI2300)
SOT-23-3
Unit: mm
Features
@VGS=2.5V,ID=4.0A
VDS=20V ,RDS(ON)=75m
@VGS=1.8V,ID=1.0A
1
0.55
VDS=20V,RDS(ON)=60m
3
+0.2
1.6 -0.1
@VGS=4.5V,ID=5.0A
+0.2
2.8 -0.1
VDS=20V,RDS(ON)=40m
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
2
+0.02
0.15 -0.02
+0.2
1.1 -0.1
+0.1
0.95 -0.1
+0.1
1.9 -0.2
0-0.1
+0.1
0.68 -0.1
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
ID
3.8
IDM
15
Continuous Drain Current
Tj=125 ℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Unit
V
A
PD
1.25
W
RthJA
100
℃/W
TJ
150
Tstg
-55 to 150
℃
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1
MOSFET
IC
SMD Type
SI2300
( KI2300)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditi ons
Min
Max
Unit
Drain-Source Breakdown Voltage
VDSS
VGS=0V,ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
uA
Gate-Body Leakage
IGSS
VGS=
100
nA
Gate Threshold Voltage *
VGS(th)
Drain- Source on-state Resistance *
20
0.78
1.0
VGS=4.5V,ID=5.0A
32
40
m
RDS(ON) VGS=2.5V,ID=4.0A
50
60
m
62
75
m
ID(ON)
Forward Transconductance *
V
10V,VDS=0V
VGS=VDS,ID=250uA
0.55
VGS=1.8V,ID=1.0A
On-State Drain Current *
gFS
VDS=5V,VGS=4.5V
18
VDS=5V,ID=5A
5
V
A
S
888
pF
144
pF
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
115
pF
Turn-On Delay Time
tD(on)
31.8
ns
14.5
ns
Rise Time
tr
Turn-Off Delay Time
Total Gate Charge
ns
31.9
ns
Qg
16.8
nC
2.5
nC
5.4
nC
Qgs
Gate-Drain Charge
Qgd
VSD
300 s,Duty Cycle
Marking
Marking
00A*
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VDS = 10V, ID = 3.5A,VGS = 4.5V
IS
Diode Forward Voltage
* Pulse Test:Pulse Width
VDD=10V,ID=1A,VGS=4.5V,RL=10
,RGEN=6
50.3
Gate-S ource Charge
Drain-Source Diode Forward Current *
VDS = 15V, VGS = 0V,f =1.0MHZ
tf
tD(off)
Fall Time
2
Typ
2%
VGS=0V,IS=1.25A
0.825
1.25
A
1.2
V