Thyristor SMD Type Silicon Controlled Rectifiers CR05AS ■ Features 1.70 ● Blocking Voltage to 400 V 0.1 ● High Surge Current Capability — 10 A ● Glass-Passivated Surface for Reliability and Uniformity 0.42 0.1 0.46 0.1 1.Gate 2.Anode 3.Cathode G A K ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Repetitive Forward and Reverse Blocking Voltage (TJ = 25 to 125 ℃, RGK = 1 K Ω) V DRM and V RRM 400 V Forward Current RMS IT (RMS) 0.8 A Average on-state current IT (AV) 0.5 A IT SM 10 A I2t 0.415 As PGM 0.1 W Peak Forward Surge Current, TA = 25℃ (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power ─ Forward, TA = 25 ℃ 2 P GF (AV) 0.01 W Peak Gate Current ─ Forward, TA = 25 ℃ (300 ms, 120 PPS) IGFM 0.1 A Peak Gate Voltage ─ Reverse VGRM 6 V Thermal Resistance, Junction to Ambient RθJA 200 ℃/W Thermal Resistance, Junction to Case RθJC 75 ℃/W TJ -40 to +125 ℃ Tstg -40 to +150 ℃ 260 ℃ Average Gate Power ─ Forward, TA = 25 ℃ Operating Junction Temperature Range @ Rated V RRM and V DRM Storage Temperature Range Lead Solder Temperature(＜1/16"from case, 10 s max) www.kexin.com.cn 1 Thyristor SMD Type CR05AS ■ Electrical Characteristics (Ta = 25℃,RGK = 1 kΩ unless otherwise noted.) Parameter Symbol Peak Forward or Reverse TC = 25℃ Blocking Current TC = 125 ℃ Test conditons Min Max 10 IDRM, IR RM VAK = Rated VDRM or VRRM 100 Unit μA Forward "On" Voltage *1 VTM ITM = 1 A Peak @ TA = 25℃ 1.7 V Gate Trigger Current (Continuous DC) *2 TC = 25 ℃ IGT Anode Voltage = 7 V, RL = 100Ω 200 μA VGT Anode Voltage=7V,RL=100 Ω Gate Trigger Voltage (Continuous DC) TC = 25 ℃ TC = -40℃ Holding Current TC=25℃ TC=-40 ℃ IH 0.8 V 1.2 Anode Voltage=7V,initiating current=20mA 5 10 mA *1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%. www.kexin.com.cn 2 Thyristor SMD Type CR05AS ■ Typical Characteristics 90 0.9 GATE TRIGGER VOLTAGE (VOLTS) 1.0 GATE TRIGGER CURRENT ( m A) 100 80 70 60 50 40 30 20 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature 1000 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 120 110 100 90 DC 80 70 180° 60 50 30° 0 60° 90° 120° 0.1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 5. Typical RMS Current Derating 95 110 Figure 4. Typical Latching Current versus Junction Temperature 0.5 I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Figure 3. Typical Holding Current versus Junction Temperature 40 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature LATCHING CURRENT ( m A) HOLDING CURRENT (m A) 1000 95 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 6. Typical On−State Characteristics www.kexin.com.cn 3