CR05AS-8 Thyristor Low Power Use REJ03G0543-0100 Rev.1.00 Mar.01.2005 Features • IT (AV) : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 4 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.1.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 8 (Mark CD) 400 500 320 400 320 Unit V V V V V CR05AS-8 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.79 0.5 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.1 0.01 6 6 0.1 – 40 to +125 – 40 to +125 50 W W V V A °C °C mg Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave Note2 180° conduction, Ta = 57°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Symbol Rated value Min. Typ. Max. — — 0.1 — — 0.1 Unit Repetitive peak reverse current Repetitive peak off-state current IRRM IDRM On-state voltage VTM — — 1.9 V Ta = 25°C, ITM = 1.5 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current IGT 20 — 100Note3 µA Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Holding current IH — — 3 mA Rth (j-a) — — 70 °C/W Tj = 25°C, VD = 12 V, RGK = 1 kΩ Note2 Junction to ambient Thermal resistance mA mA Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 3. If special values of IGT are required, choose item E from those listed in the table below if possible. Item B E IGT (µA) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 4. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.1.00, Mar.01.2005, page 2 of 7 CR05AS-8 Performance Curves 102 7 Ta = 25°C 5 3 2 Surge On-State Current (A) 10 101 7 5 3 2 100 7 5 3 2 1 2 3 4 Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 VFGM = 6V PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 4 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Gate Trigger Voltage (V) 5 Gate Trigger Current vs. Junction Temperature 1.0 Distribution 0.7 Typical Example 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.1.00, 6 Gate Characteristics 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0.8 7 Conduction Time (Cycles at 60Hz) 7 5 3 2 10–1 8 On-State Voltage (V) 102 7 5 3 2 9 0 100 5 × 100 (%) 0 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10–1 Rated Surge On-State Current Mar.01.2005, page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25×25×t0.7 5 Aluminum Board 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR05AS-8 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 60° 90° 120° 180° 1.0 0.5 θ 360° Resistive, inductive loads 0 0 Ambient Temperature (°C) Average Power Dissipation (W) 1.5 25×25×t0.7 140 Aluminum Board 120 Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 90° 60° 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ 360° 0 180° 120° 0.2 0.8 0.6 0.4 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 0.5 θ θ 360° 25×25×t0.7 140 Aluminum Board θ θ 360° 120 Resistive loads Natural convection 100 80 60 40 60° θ = 30° 20 120° 90° 180° Resistive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.8 0.6 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 90° 180° θ = 30° 60° 120° 270° 1.5 DC 1.0 0.5 θ 360° 0 0 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Rev.1.00, Ambient Temperature (°C) 180° 1.0 0 Average Power Dissipation (W) 90° θ = 30° 60° 120° Mar.01.2005, page 4 of 7 160 Ambient Temperature (°C) Average Power Dissipation (W) 160 1.5 25×25×t0.7 140 Aluminum Board θ 120 360° Resistive, inductive loads Natural convection 100 80 60 DC 40 θ = 30° 60° 20 0 120° 90° 0 0.2 0.4 270° 180° 0.6 Average On-State Current (A) 0.8 Typical Example 140 120 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example Tj = 125°C 100 80 60 40 20 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature 100 80 60 #2 40 #1 Typical Example 20 # 1 IGT(25°C = 10µA) # 2 IGT(25°C = 66µA) Tj = 125°C, RGK = 1kΩ 0 0 10 2 3 5 7101 2 3 5 7 102 2 3 5 7 10 3 Holding Current (mA) 120 102 7 5 3 2 101 7 5 3 2 Tj = 25°C IH (25°C) = 1mA IGT(25°C) = 25µA Distribution Typical Example 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 Typical Example IGT(25°C) IH(1kΩ) 13µA 1.6mA #1 59µA 1.8mA #2 400 #1 300 #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 Mar.01.2005, page 5 of 7 × 100 (%) Rate of Rise of Off-State Voltage (V/µs) Gate to Cathode Resistance (kΩ) Rev.1.00, Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR05AS-8 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) CR05AS-8 Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 #1 #2 Typical Example IGT(25°C) #1 10µA #2 66µA 102 7 5 4 3 2 Tj = 25°C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.1.00, Mar.01.2005, page 6 of 7 CR05AS-8 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 0.4 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.44 Max 0.8 Min φ1 1.5 ± 0.1 0.44 Max (1.5) (0.2) 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 4000 Type name – ET +Direction (1 or 2) + 4 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Mar.01.2005, page 7 of 7 Standard order code example CR05AS-8-ET14 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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