SUNTAC CR05AS

CR05AS Series
MCR100 Series
i
Sensitive Gate
Silicon Controlled Rectifiers
SCR
0.8 AMPERES RMS
300 thru 800 VOLTS
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic
SOT-89 package which is
readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 800 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability — 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• Immunity to dV/dt — 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
G
A
K
2
•
•
1
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Voltage(Note 1)
Value
Unit
Peak Repetitive Off−State
(TJ = *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
CR05AS-3
CR05AS-4
CR05AS-6
CR05AS-8
VDRM,
VRRM
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
A
ITSM
10
A
I2t
0.415
A2s
PGM
0.1
W
PG(AV)
0.10
W
Forward Peak Gate Current
(TA = 25°C, Pulse Width v 1.0 ms)
IGM
1.0
A
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width v 1.0 ms)
VGRM
5.0
V
Operating Junction Temperature Range
@ Rate VRRM and VDRM
TJ
−40 to
110
°C
Storage Temperature Range
Tstg
−40 to
150
°C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(TA = 25°C, Pulse Width v 1.0 ms)
Forward Average Gate Power
(TA = 25°C, t = 8.3 ms)
SOT-89
V
300
400
600
800
PIN ASSIGNMENT
1
Gate
2
Anode
3
Cathode
4(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
1
D
CR05AS Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJC
RqJA
75
200
°C/W
TL
260
°C
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current(Note 2) TC = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kW)
TC = 110°C
IDRM, IRRM
—
—
—
—
10
100
mA
VTM
—
—
1.7
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
Peak Forward On−State Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)(Note 3)
(VAK = 7.0 Vdc, RL = 100 W)
TC = 25°C
IGT
—
40
200
mA
Holding Current(2)
(VAK = 7.0 Vdc, Initiating Current = 20 mA)
TC = 25°C
TC = −40°C
IH
—
—
0.5
—
5.0
10
mA
Latch Current
(VAK = 7.0 V, Ig = 200 mA)
TC = 25°C
TC = −40°C
IL
—
—
0.6
—
10
15
mA
Gate Trigger Voltage (Continuous dc)(Note 3)
(VAK = 7.0 Vdc, RL = 100 W)
TC = −40°C
TC = 25°C
VGT
—
—
0.62
—
0.8
1.2
V
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C)
dV/dt
20
35
—
V/ms
Critical Rate of Rise of On−State Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
di/dt
—
—
50
A/ms
DYNAMIC CHARACTERISTICS
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
2. RGK = 1000 W included in measurement.
3. Does not include RGK in measurement.
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Anode +
VTM
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
2
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
CR05AS Series
0.9
GATE TRIGGER VOLTAGE (VOLTS)
1.0
90
GATE TRIGGER CURRENT ( m A)
100
80
70
60
50
40
30
20
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20 35 50
65 80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
LATCHING CURRENT ( m A)
HOLDING CURRENT (m A)
1000
100
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
100
10
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
120
110
100
90
DC
80
70
180°
60
50
30°
0
60°
90°
120°
0.1
0.2
0.3
0.4
IT(RMS), RMS ON-STATE CURRENT (AMPS)
95
110
Figure 4. Typical Latching Current versus
Junction Temperature
0.5
I T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
Figure 3. Typical Holding Current versus
Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
110
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
1000
40
95
Figure 5. Typical RMS Current Derating
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 6. Typical On−State Characteristics
3