CR05AS Series MCR100 Series i Sensitive Gate Silicon Controlled Rectifiers SCR 0.8 AMPERES RMS 300 thru 800 VOLTS Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic SOT-89 package which is readily adaptable for use in automatic insertion equipment. • Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits • Blocking Voltage to 800 V • On−State Current Rating of 0.8 Amperes RMS at 80°C • High Surge Current Capability — 10 A • Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design • Immunity to dV/dt — 20 V/msec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity G A K 2 • • 1 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Voltage(Note 1) Value Unit Peak Repetitive Off−State (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) CR05AS-3 CR05AS-4 CR05AS-6 CR05AS-8 VDRM, VRRM On-State RMS Current (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A ITSM 10 A I2t 0.415 A2s PGM 0.1 W PG(AV) 0.10 W Forward Peak Gate Current (TA = 25°C, Pulse Width v 1.0 ms) IGM 1.0 A Reverse Peak Gate Voltage (TA = 25°C, Pulse Width v 1.0 ms) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width v 1.0 ms) Forward Average Gate Power (TA = 25°C, t = 8.3 ms) SOT-89 V 300 400 600 800 PIN ASSIGNMENT 1 Gate 2 Anode 3 Cathode 4(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. 1 D CR05AS Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RqJC RqJA 75 200 °C/W TL 260 °C Thermal Resistance − Junction−to−Case − Junction−to−Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current(Note 2) TC = 25°C (VD = Rated VDRM and VRRM; RGK = 1 kW) TC = 110°C IDRM, IRRM — — — — 10 100 mA VTM — — 1.7 V OFF CHARACTERISTICS ON CHARACTERISTICS Peak Forward On−State Voltage* (ITM = 1.0 A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc)(Note 3) (VAK = 7.0 Vdc, RL = 100 W) TC = 25°C IGT — 40 200 mA Holding Current(2) (VAK = 7.0 Vdc, Initiating Current = 20 mA) TC = 25°C TC = −40°C IH — — 0.5 — 5.0 10 mA Latch Current (VAK = 7.0 V, Ig = 200 mA) TC = 25°C TC = −40°C IL — — 0.6 — 10 15 mA Gate Trigger Voltage (Continuous dc)(Note 3) (VAK = 7.0 Vdc, RL = 100 W) TC = −40°C TC = 25°C VGT — — 0.62 — 0.8 1.2 V Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C) dV/dt 20 35 — V/ms Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA) di/dt — — 50 A/ms DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. RGK = 1000 W included in measurement. 3. Does not include RGK in measurement. Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) CR05AS Series 0.9 GATE TRIGGER VOLTAGE (VOLTS) 1.0 90 GATE TRIGGER CURRENT ( m A) 100 80 70 60 50 40 30 20 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature LATCHING CURRENT ( m A) HOLDING CURRENT (m A) 1000 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 120 110 100 90 DC 80 70 180° 60 50 30° 0 60° 90° 120° 0.1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 95 110 Figure 4. Typical Latching Current versus Junction Temperature 0.5 I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) Figure 3. Typical Holding Current versus Junction Temperature TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 1000 40 95 Figure 5. Typical RMS Current Derating 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 6. Typical On−State Characteristics 3