Thyristor SMD Type SCR Thyristor 03P2J/03P4J/03P5J 1.70 0.1 ■ Features ● High Anode to Cathode Voltage VDRM,VRRM=200V(03P2J) 0.42 0.1 VDRM,VRRM=400V(03P4J) 0.46 0.1 VDRM,VRRM=500V(03P5J) 1.Gate 2.Anode 3.Cathode ■ Absolute Maximum Ratings Ta = 25℃ Symbol 03P2J 03P4J 03P5J Repetitive Peak Reverse Voltages @ IRRM=100uA Parameter VRRM 200 400 500 Repetitive Peak Off-State Voltages @ IDRM=100uA VDRM 200 400 500 Average on-state Current (Ta = 77℃Single phase half wave) IT(AV) 0.3 IT(RMS) 0.47 ITSM 6 I 2t 0.15 A 2s Peak Gate Current ─ Forward (f≥50Hz,duty≤10℅) IGFM 0.1 A Peak Gate Voltage ─ Reverse VGRM 6 V Forward Current RMS Non-Repetitive Peak on-state Current (f=50Hz,1cycle) Circuit Fusing Considerations (1ms≤ t ≤10ms) A PGM 100 Average Gate Power ─ Forward PGF(AV) 10 Thermal Resistance Junction to Ambient Rth(j-a) 65 TJ 125 Tstg -55 to 150 Peak Gate Power ─ Forward (f≥50Hz,duty≤10℅) Junction Temperature Storage Temperature Range Unit mW ℃/W ℃ ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) Parameter Symbol Gate Non-Trigger Voltage VGD Off-state Leakage Current ID,IR On-state Voltage Test Conditions VDM=1/2VDRM,TJ = 125℃ Min Typ. Max 0.1 Unit V VDRM=VRRM,RGK=1KΩ,Tj=25℃; 10 VDRM=VRRM,Tj=125℃; 100 VTM IT=1A 1.6 Gate Trigger Voltage VGT VDM=6V, RL=100Ω 0.8 Gate Trigger Current (Continuous dc) IGT VDM=6V, RL=100Ω 200 μA Holding Current IH VD=12V, IT=1A 5 mA Critical Rate of rise of off-state Voltage Circuit Commutated turn-off time dV/dt tq uA V VDM=2/3VDRM, Tj=125 ℃ 40 V/us VD=2/3VDRM, Tj=125℃,TM=200mA; VR≥25VdITM/dt=15A/us,dVD/dt=20V/us; 25 uS ■Marking hFE Classification NO 03P2J 03P4J 03P5J Marking 03P2J 03P4J 03P5J www.kexin.com.cn 1 Thyristor SMD Type SCR Thyristor 03P2J/03P4J/03P5J ■ Typical Characterisitics 2 www.kexin.com.cn Thyristor SMD Type SCR Thyristor 03P2J/03P4J/03P5J ■ Typical Characterisitics www.kexin.com.cn 3