Transistors SMD Type NPN Transistors 2SD1935-HF SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● Complimentary to 2SB1295-HF 1 0.55 ● Low collector to emitter saturation voltage. +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Large current capacity. 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a +0.05 0.1 -0.01 +0.1 0.97 -0.1 Pb−Free Lead Finish 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 15 Collector - Emitter Voltage VCEO 15 Emitter - Base Voltage Unit V VEBO 5 Collector Current - Continuous IC 800 mA Collector Current - Pulse ICP 3 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 15 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 15 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 12 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) DC current gain hFE Collector output capacitance Cob Transition frequency fT V IC=5 mA, IB=0.5mA 10 25 IC=400 mA, IB=20mA 100 200 IC=400 mA, IB=20mA 0.9 1.2 VCE= 2V, IC= 50mA 135 VCE= 2V, IC= 800mA 80 Unit uA mV V 900 VCB= 10V, IE=0,f=1MHz 10 pF VCE= 2V, IC= 50mA 200 MHz ■ Classification of hfe(1) Type 2SD1935-CT5-HF 2SD1935-CT6-HF 2SD1935-CT7-HF 2SD1935-CT8-HF Range 135-270 200-400 300-600 450-900 Marking CT5 F CT6 F CT7 F CT8 F www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1935-HF ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1935-HF ■ Typical Characterisitics www.kexin.com.cn 3