SMD Type Transistors

Transistors
SMD Type
PNP Transistors
2SB970
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
1
0.55
● For low-voltage output amplification
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● Low collector to emitter saturation voltage VCE(sat).
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-15
Collector - Emitter Voltage
VCEO
-10
Emitter - Base Voltage
VEBO
-7
Collector Current - Continuous
IC
-500
3.collector
Unit
V
mA
Collector Current - Pulse
ICP
-1
A
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
Tstg
-55 to 150
Storage Temperature range
+0.1
0.38 -0.1
2.Emitter
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-15
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-10
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-7
Collector-base cut-off current
ICBO
VCB= - 10V , IE=0
IEBO
VEB= -6V , IC=0
Emitter cut-off current
Typ
Max
V
-0.1
VCE(sat)
IC=-400 mA, IB=-8mA
-0.16
-0.3
Base - emitter saturation voltage
VBE(sat)
IC=-400 mA, IB=-8mA
-0.8
-1.2
hFE
Collector output capacitance
Cob
Transition frequency
fT
uA
-0.1
Collector-emitter saturation voltage
DC current gain
Unit
VCE= -2V, IC= -500mA
130
VCE= -2V, IC= -1A
60
V
350
VCB= -10V, IE= 0,f=1MHz
22
pF
VCE= -10V, IE = 50mA,f=200MHz
130
MHz
■ Classification of hfe(1)
Type
2SB970-R
2SB970-S
Range
130-220
180-350
Marking
1RR
1RS
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1
Transistors
SMD Type
PNP Transistors
2SB970
■ Typical Characterisitics
IC — VCE
200
–1.0
160
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
– 0.6
80
–4mA
–3mA
– 0.4
40
–2mA
– 0.2
0
20
40
60
0
80 100 120 140 160
–1mA
0
–1
–2
VCE(sat) — IC
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current IC (A)
Cob — VCB
Collector output capacitance Cob (pF)
IE=0
f=1MHz
Ta=25˚C
60
50
40
30
20
10
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
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25˚C
–1
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
300
–1
–3
–10
Collector current IC (A)
200
VCB=–10V
Ta=25˚C
180
500
400
Ta=–25˚C
– 0.1
VCE=–2V
Ta=75˚C
25˚C
–25˚C
200
100
160
140
120
100
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
Collector current IC (A)
80
70
–6
–3
fT — I E
600
IC/IB=50
– 0.03
–5
–10
hFE — IC
–100
– 0.1
–4
–30
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
– 0.3
–3
IC/IB=50
– 0.3
Transition frequency fT (MHz)
0
Ta=25˚C
– 0.8
120
VBE(sat) — IC
–100
Base to emitter saturation voltage VBE(sat) (V)
–1.2
Collector current IC (A)
Collector power dissipation PC (mW)
PC — Ta
240
–10
0
1
3
10
30
Emitter current IE (mA)
100