Transistors SMD Type PNP Transistors 2SB970 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● For low-voltage output amplification +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Low collector to emitter saturation voltage VCE(sat). 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -500 3.collector Unit V mA Collector Current - Pulse ICP -1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range +0.1 0.38 -0.1 2.Emitter ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -15 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -10 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= - 10V , IE=0 IEBO VEB= -6V , IC=0 Emitter cut-off current Typ Max V -0.1 VCE(sat) IC=-400 mA, IB=-8mA -0.16 -0.3 Base - emitter saturation voltage VBE(sat) IC=-400 mA, IB=-8mA -0.8 -1.2 hFE Collector output capacitance Cob Transition frequency fT uA -0.1 Collector-emitter saturation voltage DC current gain Unit VCE= -2V, IC= -500mA 130 VCE= -2V, IC= -1A 60 V 350 VCB= -10V, IE= 0,f=1MHz 22 pF VCE= -10V, IE = 50mA，f=200MHz 130 MHz ■ Classification of hfe(1) Type 2SB970-R 2SB970-S Range 130-220 180-350 Marking 1RR 1RS www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB970 ■ Typical Characterisitics IC — VCE 200 –1.0 160 IB=–10mA –9mA –8mA –7mA –6mA –5mA – 0.6 80 –4mA –3mA – 0.4 40 –2mA – 0.2 0 20 40 60 0 80 100 120 140 160 –1mA 0 –1 –2 VCE(sat) — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 www.kexin.com.cn 25˚C –1 75˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 300 –1 –3 –10 Collector current IC (A) 200 VCB=–10V Ta=25˚C 180 500 400 Ta=–25˚C – 0.1 VCE=–2V Ta=75˚C 25˚C –25˚C 200 100 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) 80 70 –6 –3 fT — I E 600 IC/IB=50 – 0.03 –5 –10 hFE — IC –100 – 0.1 –4 –30 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) – 0.3 –3 IC/IB=50 – 0.3 Transition frequency fT (MHz) 0 Ta=25˚C – 0.8 120 VBE(sat) — IC –100 Base to emitter saturation voltage VBE(sat) (V) –1.2 Collector current IC (A) Collector power dissipation PC (mW) PC — Ta 240 –10 0 1 3 10 30 Emitter current IE (mA) 100