MOSFET SMD Type P-Channel MOSFET AO4435-HF (KO4435-HF) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-10.5 A (VGS =-20V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 14mΩ (VGS =-20V) ● RDS(ON) ＜ 18mΩ (VGS =-10V) ● RDS(ON) ＜ 36mΩ (VGS =-5V) 1 2 3 4 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead L=0.3mH TA=25°C TA=70°C t ≤ 10s Steady-State ID -8 -80 IAR -20 EAR 60 RthJA V -10.5 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4435-HF (KO4435-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ -30 ID=-250μA, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±25V -1.7 VDS=VGS ID=-250μA RDS(On) VGS=-20V, ID=-11A Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, ID=-10A VGS=-10V, VDS=-5V VDS=-5V, ID=-10A 22 1130 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1 VGS=-10V, VDS=-15V, ID=-10A VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω 8.5 tf 7 trr 25 Body Diode Reverse Recovery Charge Qrr 2 www.kexin.com.cn 30 12 IS IS=-1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. KC**** F ns 18 Body Diode Reverse Recovery Time 4435 nC 5.5 Turn-Off Fall Time IF=-10A, dI/dt=100A/us Ω 24 9.5 8.7 Marking pF 8 18 td(on) ■ Marking 1400 155 Turn-On DelayTime VSD S 240 3.3 Maximum Body-Diode Continuous Current mΩ A Qgd Diode Forward Voltage V 36 Gate Drain Charge tr -3 -80 Qgs td(off) nA 18 Gate Source Charge Turn-Off DelayTime ±100 19 TJ=125℃ Qg Turn-On Rise Time uA 14 VGS=-5V, ID=-5A On state drain current Unit V VDS=-30V, VGS=0V VGS=-20V, ID=-11A Static Drain-Source On-Resistance Max nC -3.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO4435-HF (KO4435-HF) ■ Typical Characterisitics 80 80 -10V -8V 60 60 -6V -ID(A) -ID (A) VDS= -5V 40 40 -4.5V 20 125°C 20 VGS= -4V 25°C 0 0 0 1 2 3 4 5 0 1 40 Normalized On-Resistance VGS=-5V 30 RDS(ON) (mΩ ) 3 4 5 6 1.6 35 25 20 VGS=-10V 15 10 VGS=-20V 5 0 5 10 15 VGS=-10V ID=-10A 1.4 VGS=-20V ID=-11A 1.2 1.0 VGS=-5V ID=-5A 0.8 0.6 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 55 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID=-11A 1E+00 45 1E-01 35 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 25 125°C 125°C 1E-02 25°C 1E-03 1E-04 15 1E-05 25°C 1E-06 5 2 4 6 8 10 12 14 16 18 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4435-HF (KO4435-HF) ■ Typical Characterisitics 2000 10 -VGS (Volts) Capacitance (pF) VDS=-15V ID=-10A 8 6 4 2 0 0 5 10 15 Ciss 1500 1000 Coss 500 Crss 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 25 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 100µs 1 1ms 10ms 100ms TJ(Max)=150°C TA=25°C Power (W) 10µs 0.1 0.1 1 10 -VDS (Volts) 1 10 1 0.00001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4 20 1000 100 -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 Zθ JA Normalized Transient Thermal Resistance 10 www.kexin.com.cn 100 1000