JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN MARKING: R0 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient (note 2) A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA VGS =10V, ID =5.8A 35 mΩ VGS =4.5V, ID =5A 40 mΩ VGS =2.5V,ID=4A 52 mΩ On characteristics Drain-source on-resistance RDS(on) (note 3) Forward tranconductance gFS Gate threshold voltage Dynamic Characteristics VGS(th) VDS =VGS, ID =250µA 8 S 0.7 1.4 V 1050 pF (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching Characteristics VDS =5V, ID =5A VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 99 pF 77 pF 3.6 Ω 5 ns (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. A,Dec,2010 Typical Characteristics CJ3400 Transfer Characteristics Output Characteristics 24 5 VGS=7V~3V Ta=25℃ Ta=25℃ Pulsed Pulsed 20 VGS=2.5V (A) (A) 4 ID ID 16 DRAIN CURRENT DRAIN CURRENT 3 12 VGS=2V 8 2 1 4 VGS=1.5V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS 0 0.0 10 (V) 0.5 1.0 RDS(ON) ID —— 1.5 GATE TO SOURCE VOLTAGE 200 —— 2.0 VGS 2.5 (V) VGS 500 Ta=25℃ Ta=25℃ Pulsed Pulsed (m) RDS(ON) 100 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 400 150 VGS=2.5V VGS=4.5V 50 300 ID=5A 200 100 VGS=10V 0 0 0 5 10 15 DRAIN CURRENT IS —— 20 ID 25 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) VSD 10 Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.0 0.3 0.6 SOURCE TO DRAIN VOLTAGE 0.9 VSD 1.2 (V) A,Dec,2010