JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel 8-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -4.1 Continuous Source-Drain Diode Current IS -0.8 Maximum Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 Thermal Resistance from Junction to Ambient(t≤10s) V A ℃ B,May,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-source threshold voltage V(BR)DSS VGS = 0V, ID =-250µA -8 VGS(th) VDS =VGS, ID =-250µA -0.5 -0.9 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-8V, VGS =0V -1 µA a Drain-source on-state resistance Forward transconductance a RDS(on) gfs VGS =-4.5V, ID =-3.5A 0.045 VGS =-2.5V, ID =-3A 0.060 VGS =-1.8V,ID=-2.0A 0.090 VDS =-5V, ID =-4.1A 6 Ω S Dynamic Input capacitanceb,c Ciss b,c Output capacitance Reverse transfer capacitance Coss b,c 740 VDS =-4V,VGS =0V,f =1MHz Crss 190 VDS =-4V,VGS =-4.5V, Total gate charge b Qg b Gate-source charge b Gate-drain charge Qgs Qgd b,c Gate resistance Rg b,c Turn-on delay time b,c Rise time td(on) tr b,c Turn-off Delay time td(off) b,c tf Fall time b,c Turn-on delay time Rise timeb,c td(on) tr b,c Turn-off delay time td(off) b,c tf Fall time pF 290 ID =-4.1A VDS =-4V,VGS =-2.5V, VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 15 4.5 9 nC 7 14 Ω 13 20 35 53 32 48 10 20 5 10 11 17 22 33 16 24 1.2 ID =-4.1A f =1MHz 7.8 1.6 1.4 ns Drain-source body diode characteristics Continuous source-drain diode current IS Pulse diode forward currenta ISM Body ciode voltage VSD -1.4 TC=25℃ -10 IF=-3.3A -0.8 -1.2 A V Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. B,May,2011 Typical Characteristics Output Characteristics -16 Transfer Characteristics -5 VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ CJ2305 Pulsed Ta=25℃ Pulsed VGS=-2.0V (A) ID ID (A) -4 -12 DRAIN CURRENT DRAIN CURRENT -3 -8 -2 VGS=-1.5V -4 -1 -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 500 VGS -2.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 400 RDS(ON) (mΩ) 240 180 VGS=-1.8V 120 VGS=-2.5V 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 300 VDS -0 -0.0 -4 300 200 ID=-3.3A 100 VGS=-4.5V 0 0 -0 -3 -6 DRAIN CURRENT -9 ID -12 (A) -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) IS —— VSD -20 Ta=25℃ SOURCE CURRENT IS (A) -10 Pulsed -3 -1 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE -1.2 -1.4 VSD (V) B,May,2011