JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW N-Channel MOSFET SOT-323 FEATURE z High density cell design for Low RDS(on) 1. GATE z Voltage controlled small signal switch 2. SOURCE z Rugged and reliable 3. DRAIN z High saturation current capability z ESD protected up to 2KV MARKING: 72K MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted) Symbol Parameter Equivalent circuit Value Unit VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V ID Continuous Drain Current 340 mA IDM Pulsed Drain Current(note1) 800 mA PD Power Dissipation 0.2 W Tj Junction Temperature 150 Я Tstg Storage Temperature -55~+150 Я RșJA Thermal Resistance from Junction to Ambient 625 Я/W D G S D,Apr,2014 MOSFET ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source Breakdown Voltage V (BR) DSS VGS = 0V, ID =250μA 60 1 2.5 V 1 μA VGS =±20V, VDS = 0V ±10 μA VGS =4.5V, ID =200mA 5.3 VGS =10V, ID =500mA 5 40 pF 30 pF 10 pF GateThreshold Voltage (note 2) VGS(th) VDS =VGS, ID =1mA Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V Gate-Source Leakage Current IGSS Drain-Source On-Resistance (note 2) V RDS(on) DYNAMIC PARAMETERS (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz SWITCHING PARAMETERS(note 3) Turn-on Delay Time td(on) VGS=10V,VDD=50V, RG=50ȍ 10 ns Turn-off Delay Time td(off) RGS=50ȍ, RL=250ȍ 15 ns Reverse Recovery Time trr Recovered Charge Qr VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us VGS=0V,IS=300mA,VR=25V dIs/dt=-100A/us 30 ns 30 nC GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=f1mA(Open Drain) f21.5 f30 V 1.5 V DRAIN-SOURCE DIODE Diode Forward Voltage(note 2) VSD IS=300mA, VGS = 0V Continuous Diode Forward Current IS 0.2 A Pulsed Diode Forward Current(note1) ISM 0.53 A Notes : 1. Repetitive rating˖Pluse width limited by junction temperature. 2. Pulse Test : Pulse width300μs, duty cycle2%. 3. Guaranteed by design, not subject to production testing. D,Apr,2014 Typical Characteristics 2N7002KW Transfer Characteristics Output Characteristics 1.2 1.2 Ta=25ć Ta=25ć Pulsed Pulsed 1.0 (A) 0.8 ID 0.8 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=5V,6V,7V,10V VGS=4V 0.4 0.6 0.4 VGS=3V 0.2 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS 5 0 (V) 1 2 RDS(ON) ID —— 3 4 GATE TO SOURCE VOLTAGE 5 —— VGS 5 VGS 10 Ta=25ć Ta=25ć Pulsed Pulsed 8 ( :) RDS(ON) 3 2 ON-RESISTANCE RDS(ON) ( :) 4 ON-RESISTANCE 6 (V) VGS=4.5V 1 6 ID=500mA 4 2 VGS=10V 0 100 0 300 600 900 DRAIN CURRENT IS 10 —— 1200 ID 1500 0 2 4 6 GATE TO SOURCE VOLTAGE (mA) 8 VGS 10 (V) VSD Ta=25ć Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE 1.6 VSD 2.0 (V) D,Apr,2014 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° D,Apr,2014