CEH2310 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS ±12 V ID 6.2 A IDM 25 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com CEH2310 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Gate Body Leakage Current IGSS VGS = ±12V, VDS = 0V VGS(th) VGS = VDS, ID = 250µA Typ Max Units 1 µA ±100 nA Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance RDS(on) 1.4 V VGS = 10V, ID = 5.8A 0.7 27 33 mΩ VGS = 4.5V, ID = 5.0A 30 38 mΩ VGS = 2.5V, ID = 2.0A 40 55 mΩ Dynamic Characteristics d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 5V, ID = 5.0A VDS = 15V, VGS = 0V, f = 1.0 MHz 5 S 830 pF 110 pF 85 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 5.8A, VGS = 10V, RGEN = 3Ω 4 10 ns 6 15 ns 28 50 ns Turn-Off Fall Time tf 4 10 ns Total Gate Charge Qg 10 13 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 5.8A, VGS = 4.5V 1.8 nC 3.3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 3.0 A 1.0 V 8