CET CEH2310

CEH2310
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.5V.
RDS(ON) = 55mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
D(1,2,5,6,)
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
G(3)
3
2
1
S(4)
TSOP-6
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
30
Units
V
Gate-Source Voltage
VGS
±12
V
ID
6.2
A
IDM
25
A
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com
CEH2310
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
Gate Body Leakage Current
IGSS
VGS = ±12V, VDS = 0V
VGS(th)
VGS = VDS, ID = 250µA
Typ
Max
Units
1
µA
±100
nA
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
RDS(on)
1.4
V
VGS = 10V, ID = 5.8A
0.7
27
33
mΩ
VGS = 4.5V, ID = 5.0A
30
38
mΩ
VGS = 2.5V, ID = 2.0A
40
55
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 5V, ID = 5.0A
VDS = 15V, VGS = 0V,
f = 1.0 MHz
5
S
830
pF
110
pF
85
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 15V, ID = 5.8A,
VGS = 10V, RGEN = 3Ω
4
10
ns
6
15
ns
28
50
ns
Turn-Off Fall Time
tf
4
10
ns
Total Gate Charge
Qg
10
13
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15V, ID = 5.8A,
VGS = 4.5V
1.8
nC
3.3
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
3.0
A
1.0
V
8