JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP54,55,56 SOT-223 TRANSISTOR (NPN) FEATURES z For AF driver and output stages z High collector current z Low collector-emitter saturation voltage z Complementary types: BCP51 ... BCP53 (PNP) 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter BCP54 BCP55 BCP56 Unit VCBO Collector-Base Voltage 45 60 100 V VCEO Collector-Emitter Voltage 45 60 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.5 W RθJA Thermal Resistance Junction to Ambient 83.3 ℃/W Tstg Storage Temperature Range ℃ -65~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Min V(BR)CBO IC= 0.1mA,IE=0 100 BCP54 45 V(BR)CEO IC= 10mA,IB=0 V V 60 80 BCP56 V(BR)EBO Base-emitter breakdown voltage Unit 60 BCP56 BCP55 Max 45 BCP54 BCP55 Collector-emitter breakdown voltage Test conditions IC= 10μA,IE=0 5 V ICBO VCB= 30 V, IE=0 hFE(1) VCE= 2V, IC=5mA 25 hFE(2) VCE= 2V, IC=150m A 63 hFE(3) VCE= 2V, IC=500m A 25 VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500m A 1 V Transition frequency fT Collector cut-off current DC current gain Collector-emitter saturation voltage 100 VCE=10V,IC=50mA,f=100MHz 100 nA 250 MHz CLASSIFICATION OF hFE(2) Rank Range BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 63-160 100-250 C,Apr,2014 Typical Characteristics Static Characteristic (mA) 250 hFE IC —— IC COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 0.9mA DC CURRENT GAIN 0.8mA 150 hFE 1000 1.0mA 200 COLLECTOR CURRENT BCP54,BCP55,BCP56 0.7mA 0.6mA 100 0.5mA 0.4mA 0.3mA 50 Ta=100℃ 300 Ta=25℃ 100 30 0.2mA IB=0.1mA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 5 1 IC VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 —— 1000 (mA) IC 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 1 10 100 COLLECTOR CURRENT IC 1000 —— IC 1000 1 (mA) 10 (mA) 100 COLLECTOR CURRENT VBE Cob/ Cib 300 COMMON EMITTER VCE=2V —— IC 1000 (mA) VCB/ VEB f=1MHz IE=0/IC=0 Cib 100 Ta=25℃ (pF) Ta=100℃ C 100 Ta=25℃ 10 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT —— VBE 10 1 0.3 (V) PC 1800 COLLECTOR POWER DISSIPATION PC (mW) 100 COMMON EMITTER VCE=10V 10 3 REVERSE BIAS VOLTAGE IC TRANSITION FREQUENCY Cob 1 0.1 1.0 (MHz) 300 CAPACITANCE IC IC β=10 10 COLLECTOR CURRENT 100 COLLECTOR CURRENT β=10 fT 10 (V) —— V 20 (V) Ta 1500 1200 900 600 300 Ta=25℃ 10 10 100 30 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Apr,2014