TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR (NPN) 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V 5 V IC Collector Current 0.8 A PC Collector Power Dissipation 600 mW Thermal Resistance From Junction To Ambient 208 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VEBO RθJA Emitter-Base Voltage ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Collector cut-off current ICEO VCE=25V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V, IC=100mA VCE(sat) IC=500mA,IB=20mA 0.5 V Collector-emitter saturation voltage 100 320 Base-emitter voltage VBE VCE=1V, IC=10mA 0.8 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 13 pF Transition frequency fT VCE=5V,IC=10mA 100 MHz CLASSIFICATION OF hFE RANK O Y RANGE 100-200 160-320 B,Dec,2011 Typical Characterisitics Static Characteristic 200 1mA hFE DC CURRENT GAIN 120 IC Ta=100℃ 600uA IC (mA) 700uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 800uA COLLECTOR CURRENT hFE 1000 900uA 160 2SC2120 500uA 400uA 80 300uA 200uA Ta=25℃ 100 40 IB=100uA 10 0 0.0 0.4 0.8 1.2 1.6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 100 VBEsat IC 800 300 (mA) IC —— β=25 300 100 Ta=100℃ Ta=25℃ 30 10 3 IC 800 300 100 30 COLLECTOR CURRENT IC 1 Ta=25℃ Ta=100℃ 0.1 800 1 3 30 10 (mA) —— VBE Cob/ Cib 100 —— 300 100 COLLECTOR CURRENT IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (mA) 800 (mA) COMMON EMITTER VCE=1V 300 (pF) 30 30 C 100 CAPACITANCE Ta=100℃ Ta=25℃ 10 Cob 10 3 3 1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 500 1 0.3 —— IC PC 800 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) V 20 (V) —— Ta VCE=5V COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY 30 10 2 β=25 1 IC 3 COLLECTOR CURRENT IC 10 COLLECTOR CURRENT 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 600 VCE 2.0 100 10 1 3 30 10 COLLECTOR CURRENT IC (mA) 600 400 200 0 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Dec,2011