SOT-89-3L Plastic-Encapsulate Transistors BCX51,BCX52,BCX53

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BCX51,BCX52,BCX53
TRANSISTOR (PNP)
1. BASE
FEATURES
z NPN Complements to BCX54,BCX55,BCX56
z Low Voltage
z High Current
2. COLLECTOR
3. EMITTER
APPLICATIONS
z Medium Power General Purposes
z Driver Stages of Audio Amplifiers
MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD
BCX52:AE, BCX52-10:AG, BCX52-16:AM
BCX53:A H, BCX53-10:AK, BCX53-16:AL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BCX51
-45
BCX52
-60
BCX53
-100
BCX51
-45
BCX52
-60
BCX53
-80
Unit
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
C,Sep,2012
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
T est
conditions
IC=-100µA,IE=0
V(BR)CBO
V(BR)CEO*
IC=-10mA,IB=0
Min
BCX51
-45
BCX52
-60
BCX53
-100
BCX51
-45
BCX52
-60
BCX53
-80
Typ
Max
Unit
V
V
V(BR)EBO
IE=-100µA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
µA
hFE(1)*
VCE=-2V, IC=-5mA
63
hFE(2)*
VCE=-2V, IC=-150mA
63
hFE(3)*
VCE=-2V, IC=-0.5A
40
VCE(sat)*
IC=-0.5A,IB=-50mA
-0.5
V
Base -emitter voltage
VBE*
VCE=-2V, IC=-0.5A
-1
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
-5
VCE=-5V,IC=-10mA, f=100MHz
V
250
50
MHz
* Pulse Test
CLASSIFICATION OF hFE(2)
BCX51
BCX51-10
BCX51-16
RANK
BCX52
BCX52-10
BCX52-16
BCX53
BCX53-10
BCX53-16
RANGE
63–250
63–160
100–250
C,Sep,2012
Typical Characteristics
Static Characteristic
-400
IC
hFE
-1.8mA
DC CURRENT GAIN
(mA)
o
Ta=100 C
-2.0mA
-300
-1.6mA
-250
COLLECTOR CURRENT
hFE —— IC
1000
VCE= -2V
COMMON
EMITTER
Ta=25℃
-350
BCX53
-1.4mA
-1.2mA
-200
-1.0mA
-150
-0.8mA
100
o
Ta=25 C
-0.6mA
-100
-0.4mA
-50
IB=-0.2mA
-0
10
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
VCE
-6
VBEsat —— IC
-1000
-10
COLLECTOR CURRENT
VCEsat ——
-400
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-1
(V)
-800
Ta=25℃
-600
-400
Ta=100℃
-100
IC
-1000
(mA)
IC
β=10
-300
-200
Ta=100℃
-100
-200
Ta=25℃
-0
-0.1
-1
-10
-100
COLLECTOR CURRENT
fT
150
——
IC
-1
(mA)
-10
-100
COLLECTOR CURRENT
IC
Cob / Cib
1000
——
IC
-1000
(mA)
VCB / VEB
(MHz)
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
fT
C
100
CAPACITANCE
TRANSITION FREQUENCY
-0
-0.1
-1000
50
100
Cib
Cob
10
VCE=-5V
o
Ta=25 C
0
-0
-20
-40
-60
COLLECTOR CURRENT
IC ——
-80
IC
1
-0.1
-100
VBE
COLLECTOR POWER DISSIPATION
Pc (W)
IC (mA)
Pc
0.75
-1000
COLLECTOR CURRENT
-1
-10
REVERSE VOLTAGE
(mA)
-100
o
Ta=100 C
-10
Ta=25℃
-1
——
V
-20
(V)
Ta
0.50
0.25
VCE=-2V
-0.1
0.00
-0
-200
-400
-600
BASE-EMITTER VOLTAGE
-800
VBE(mV)
-1000
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
C,Sep,2012