JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR (PNP) 1. BASE FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 2. COLLECTOR 3. EMITTER APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:A H, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Unit V V Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA C,Sep,2012 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage T est conditions IC=-100µA,IE=0 V(BR)CBO V(BR)CEO* IC=-10mA,IB=0 Min BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Typ Max Unit V V V(BR)EBO IE=-100µA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1)* VCE=-2V, IC=-5mA 63 hFE(2)* VCE=-2V, IC=-150mA 63 hFE(3)* VCE=-2V, IC=-0.5A 40 VCE(sat)* IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE* VCE=-2V, IC=-0.5A -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage -5 VCE=-5V,IC=-10mA, f=100MHz V 250 50 MHz * Pulse Test CLASSIFICATION OF hFE(2) BCX51 BCX51-10 BCX51-16 RANK BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 RANGE 63–250 63–160 100–250 C,Sep,2012 Typical Characteristics Static Characteristic -400 IC hFE -1.8mA DC CURRENT GAIN (mA) o Ta=100 C -2.0mA -300 -1.6mA -250 COLLECTOR CURRENT hFE —— IC 1000 VCE= -2V COMMON EMITTER Ta=25℃ -350 BCX53 -1.4mA -1.2mA -200 -1.0mA -150 -0.8mA 100 o Ta=25 C -0.6mA -100 -0.4mA -50 IB=-0.2mA -0 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE -6 VBEsat —— IC -1000 -10 COLLECTOR CURRENT VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1 (V) -800 Ta=25℃ -600 -400 Ta=100℃ -100 IC -1000 (mA) IC β=10 -300 -200 Ta=100℃ -100 -200 Ta=25℃ -0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT 150 —— IC -1 (mA) -10 -100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB (MHz) f=1MHz IE=0 / IC=0 o Ta=25 C (pF) fT C 100 CAPACITANCE TRANSITION FREQUENCY -0 -0.1 -1000 50 100 Cib Cob 10 VCE=-5V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT IC —— -80 IC 1 -0.1 -100 VBE COLLECTOR POWER DISSIPATION Pc (W) IC (mA) Pc 0.75 -1000 COLLECTOR CURRENT -1 -10 REVERSE VOLTAGE (mA) -100 o Ta=100 C -10 Ta=25℃ -1 —— V -20 (V) Ta 0.50 0.25 VCE=-2V -0.1 0.00 -0 -200 -400 -600 BASE-EMITTER VOLTAGE -800 VBE(mV) -1000 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Sep,2012