JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR20125,150,200 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) 2. ANODE Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Unit MBR20125 MBR20150 MBR20200 125 150 200 V 87.5 105 140 V IO Average rectified output current 20 A PD Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Device Test conditions Min MBR20125 IR=0.1mA 125 MBR20150 MBR20200 Reverse current IR IR=1mA MBR20125 VR=125V MBR20150 VR=150V MBR20200 VR=200V MBR20125 VF(1) MBR20150 Max V 150 200 9 μA 0.1 mA IF=10A 0.9 V MBR20125 VF(2) MBR20150 Unit 0.87 MBR20200 Forward voltage Typ IF=20A 1 MBR20200 A,Nov,2010