TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF30200CT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage Value Unit 200 V VR DC blocking voltage VR(RMS) RMS reverse voltage 140 V Average rectified output current 30 A 200 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) Reverse current IR VR=200V 0.1 mA Forward voltage VF IF=15A 0.95 V Typical total capacitance Ctot VR=4V,f=1MHz IR=1mA 200 V 800 pF A,Nov,2010