JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Diodes MBR1030CT, 35CT, 40CT, 45CT, 50CT, 60CT TO-220-3L SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage IO MBR MBR MBR MBR MBR 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT 30 35 40 45 50 60 V 21 24.5 28 31.5 35 42 V Unit 10 A 125 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IFSM PD RΘJA Average rectified output current@ Tc=105℃ MBR Non-Repetitive peak forward surge current 8.3ms half sine wave A,Nov,2010 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Symbol V(BR) IR VF(1) Forward voltage VF(2)* Typical total capacitance Ctot Device Test conditions Min MBR1030CT 30 MBR1035CT 35 MBR1040CT IR=0.1mA 45 MBR1050CT 50 MBR1060CT 60 VR=30V MBR1035CT VR=35V MBR1040CT VR=40V MBR1045CT VR=45V MBR1050CT VR=50V MBR1060CT VR=60V MBR1030CT-1045CT Max 40 MBR1045CT MBR1030CT Typ V 0.1 0.8 MBR1030CT-1045CT 0.84 MBR1030CT-1060CT IF=10A VR=4V,f=1MHz mA 0.7 IF=5A MBR1050CT,1060CT MBR1050CT,1060CT Unit V 0.95 150 pF *Pulse test A,Nov,2010