TO-220-3L Plastic-Encapsulate Diodes MBR1030CT, 35CT, 40CT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR1030CT, 35CT, 40CT, 45CT, 50CT, 60CT
TO-220-3L
SCHOTTKY BARRIER RECTIFIER
1. ANODE
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
IO
MBR
MBR
MBR
MBR
MBR
1030CT
1035CT
1040CT
1045CT
1050CT
1060CT
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
Unit
10
A
125
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IFSM
PD
RΘJA
Average rectified output current@ Tc=105℃
MBR
Non-Repetitive peak forward surge current
8.3ms half sine wave
A,Nov,2010
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Symbol
V(BR)
IR
VF(1)
Forward voltage
VF(2)*
Typical total capacitance
Ctot
Device
Test conditions
Min
MBR1030CT
30
MBR1035CT
35
MBR1040CT
IR=0.1mA
45
MBR1050CT
50
MBR1060CT
60
VR=30V
MBR1035CT
VR=35V
MBR1040CT
VR=40V
MBR1045CT
VR=45V
MBR1050CT
VR=50V
MBR1060CT
VR=60V
MBR1030CT-1045CT
Max
40
MBR1045CT
MBR1030CT
Typ
V
0.1
0.8
MBR1030CT-1045CT
0.84
MBR1030CT-1060CT
IF=10A
VR=4V,f=1MHz
mA
0.7
IF=5A
MBR1050CT,1060CT
MBR1050CT,1060CT
Unit
V
0.95
150
pF
*Pulse test
A,Nov,2010