TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF3060CT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage Value Unit 60 V VR DC blocking voltage VR(RMS) RMS reverse voltage 42 V Average rectified output current 30 A 200 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=1mA Reverse current IR VR=60V 0.2 mA VF1 IF=15A 0.8 V VF2* IF=30A 0.95 V Ctot* VR=4V,f=1MHz Forward voltage Typical total capacitance 60 V 400 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. B,Apr,2013