TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF1030,35,40,45,50CT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage MBRF10 MBRF10 MBRF10 MBRF10 30CT 35CT 40CT 45CT 50CT 30 35 40 45 50 V 21 24.5 28 31.5 35 V 10 A 120 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Average rectified output current Unit MBRF10 Non-Repetitive peak forward surge current 8.3ms half sine wave A,Nov,2010 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Symbol V(BR) IR Device Test conditions Min MBRF1030CT 30 MBRF1035CT 35 MBRF1040CT IR=0.1mA 45 MBRF1050CT 50 VR=30V MBRF1035CT VR=35V MBRF1040CT VR=40V MBRF1045CT VR=45V MBRF1050CT VR=50V Max Unit V 40 MBRF1045CT MBRF1030CT Typ 0.1 mA MBRF1030CT MBRF1035CT VF(1) MBRF1040CT 0.7 IF=5A MBRF1045CT MBRF1050CT Forward voltage 0.8 V MBRF1030CT MBRF1035CT VF(2) MBRF1040CT 0.84 IF=10A MBRF1045CT MBRF1050CT Typical total capacitance Ctot MBRF1030-50CT 0.95 VR=4V,f=1MHz 150 pF A,Nov,2010