JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 CMSD2004S Plastic-Encapsulate Diodes SOT-23 SWITCHING DIODE FEATURES CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation 1 3 2 MARKING : B6D Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 300 V DC Blocking Voltage VR 240 V Peak Repetitive Current IO 200 mA Continuous Forward Current IF 225 mA Peak Repetitive Forward Current IFRM 625 mA Forward Surge Current t=1μs IFSM 4.0 A Forward Surge Current t=1s IFSM 1.0 A Power Dissipation Pd 250 mW Junction Temperature TJ 150 ℃ Storage Temperature Range -55~+150 TSTG ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test V(BR) IR= 100μA Reverse voltage leakage current IR VR=240V 0.1 μA Forward voltage VF IF=100mA 1 V Diode capacitance CD VR=0V Reveres recovery time trr IF=IR=30mA,RL=100Ω Reverse breakdown voltage conditions Min Max 240 f=1MHz Unit V 5 pF 50 ns A,May,2011