TIGER ELECTRONIC CO.,LTD SOT-89 Plastic-Encapsulate Transistors MCK 100- 6，- 8 SOT-89 Silicon Planar PNPN Thyristor FEATURES 1.KATHODE Current-IGT : 200 μA ITRMS : 2.ANODE 0.8 A 3.GATE VDRM : MCK100-6：400 V MCK100-8：600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless otherwise Test specified） conditions MIN MAX UNIT * VTM ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V On state voltage Peak Repetitive forward and reverse VDRM blocking voltage IDRM= 10 μA ,VMAX=1010 V AND MCK100-6 Peak forward or reverse blocking IDRM VAK= Rated Current IRRM VDRM or VRRM IH IHL= 20 mA , Av = Holding current Gate trigger current V 600 VRRM MCK100-8 400 7V 10 µA 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA B 80 200 µA VAK=7V IGT * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 Typical Characteristics MCK100-6,-8