Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. Features • Fast switching speed • Low collector-to-emitter saturation voltage: ⎯ VCE(sat) = −0.3 V MAX. @IC = −6 A Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage VCBO VCEO Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature VEBO ID(DC) IC(pulse) IB(DC) PT PT Tj Tstg Conditions PW ≤ 300 μs, duty cycle ≤ 10% Tc = 25°C Ta = 25°C Ratings Unit −150 −100 V V −7.0 −10 −20 −6.0 40 1.5 150 −55 to +150 V A A A W W °C °C Package Drawing (Unit: mm) ? ? ? ? Electrode Connection ? R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Page 1 of 4 2SA1646,2SA1646-Z Chapter Title Electrical Characteristics (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1*1 hFE2*1 hFE3*1 VCE(sat)1*1 VCE(sat)2*1 VBE(sat)1*1 VBE(sat)2*1 fT Cob ton tstg tf Conditions VCB = −100 V, IE = 0 A VEB = −5 V, IC = 0 A VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −2 A VCE = −2 V, IC = −6 A IC = −6 A, IB = −0.3 A IC = −8 A, IB = −0.4 A IC = −6 A, IB = −0.3 A IC = −8 A, IB = −0.4 A VCE = −10 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1 MHz IC = −6 A, IB1 = −IB2 = −0.3 A, RL = 8.3 Ω, VCC = −50 V Refer to the test circuit. MIN. TYP. 100 100 60 MAX. Unit −10 −10 μA μA 400 −0.3 −0.5 −1.2 −1.5 150 250 0.3 1.5 0.4 − − − V V V V MHz pF μs μs μs Note: *1.Pulse test PW ≤ 350 μs, Duty Cycle ≤ 2% hFE Classification Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 Switching Time Test Circuit Base current waveform Collector current waveform R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Page 2 of 4 2SA1646,2SA1646-Z Chapter Title IC Derating dT (%) Total Power Dissipation PT (W) Typical Characteristics (Ta = 25°C) Case Temperature TC (°C) Collector Current IC (A) Collector Current IC (A) Case Temperature TC (°C) Single pulse Collector to Emitter Voltage VCE (V) Collector Current IC (A) R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Collector Saturation Voltage VCE(sat) (V) DC Current Gain hFE Pulse test Collector to Emitter Voltage VCE (V) Pulse test Collector Current IC (A) Page 3 of 4 Pulse test Gain Bandwidth Product fT (MHz) Chapter Title Base Saturation Voltage VBE(sat) (V) 2SA1646,2SA1646-Z Collector Current IC (A) Fall Time tf (μ s) StorageTime tstg (μ s) Turn-On Time ton (μ s) Collector Capacitance Cob (pF) Collector Current IC (A) Collector to Base Voltage VCB (V) R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Collector Current IC (A) Page 4 of 4 Revision History 2SA1646,2SA1646-Z Data Sheet Description Rev. 1.00 2.00 Date Apr 12, 2002 Jul 01, 2010 Page p.1 Throughout Summary First Edition issued (D16120EJ1V0DS00) Deletion of the description “Mold package that does not require an insulating board or insulation bushing” in Features. 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