Preliminary Datasheet 2SA673A(K) R07DS0430EJ0400 (Previous: REJ03G0627-0300) Rev.4.00 Jun 07, 2011 Silicon PNP Epitaxial Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature R07DS0430EJ0400 Rev.4.00 Jun 07, 2011 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –50 –50 –4 –0.5 0.4 150 –55 to +150 Unit V V V A W °C °C Page 1 of 5 2SA673A(K) Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage DC current transfer ratio Gain bandwidth product Turn on time Turn off time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VBE VCE(sat) VBE(sat) hFE*1 hFE fT ton toff tstg Min –50 –50 –4 — — — — — 60 10 — — — — Typ — — — — — –0.64 –0.2 –0.87 — — 120 0.3 0.6 0.4 Max — — — –0.5 –0.5 — –0.6 — 320 — — — — — Unit V V V μA μA V V V MHz μs μs μs Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 μA, IC = 0 VCE = –20 V, IE = 0 VEB = –3 V, IC = 0 VCE = –3 V, IC = –10 mA IC = –150 mA, IB = –15 mA*2 IC = –150 mA, IB = –15 mA*2 VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA*2 VCE = –3 V, IC = –10 mA VCC = –10.3 V IC = 10 IB1 = –10 IB2 = –10 mA VCC = –5 V, IC = IB1 = IB2 = –20 mA Notes: 1. The 2SA673A(K) is grouped by hFE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 R07DS0430EJ0400 Rev.4.00 Jun 07, 2011 Page 2 of 5 2SA673A(K) Preliminary Main Characteristics Typical Output Characteristics (1) –100 100 –0.5 –0.4 –40 –0.3 –0.2 –20 –0.1 mA IB = 0 0 150 Ambient Temperature Ta (°C) –2 –6 –8 –10 Typical Transfer Characteristics –500 –2 –200 –1 mA –100 PC = 400 mW 0 –2 –10 –3 –1.0 –0.3 –4 –6 –8 0 –10 Collector to Emitter Voltage VCE (V) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 150 VCE = –3 V 75 50 25 0 Ta 50 = °C –25 0 –2 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) R07DS0430EJ0400 Rev.4.00 Jun 07, 2011 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 100 25 –25 –300 VCE = –3 V Ta = 75° C –7 –6 –5 –4 –3 –400 Collector Current IC (mA) –30 IB = 0 DC Current Transfer ratio hFE –4 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Collector Current IC (mA) –0.6 –60 W 50 –0.7 m 0 –0.9 –0.8 0 200 –80 0 40 400 –1. = Collector Current IC (mA) 600 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve –500 240 200 VCE = –3 V 160 120 80 40 0 –5 –10 –20 –50 –100 –200 –500 Collector Current IC (mA) Page 3 of 5 Collector to Emitter Saturation Voltage vs. Collector Current –0.7 –0.6 IC = 10 IB –0.5 –0.4 –0.3 –0.2 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500 Collector Current IC (mA) Base to Emitter Saturation Voltage VBE(sat) (V) Preliminary Base to Emitter Saturation Voltage vs. Collector Current –1.1 –0.9 –0.8 –25 0 25 50 5°C =7 a T –0.7 –0.6 –0.5 –0.4 –0.1 –0.2 –0.5 –1.0 –2 Collector Current IC (mA) 1,000 IC = 10 IB –0.9 –0.8 –0.7 –0.6 –0.5 –25 0 25 50 C 75° = Ta 500 VCC = –10.3 V IC = 10 IB1 = –10 IB2 200 tstg toff 100 50 ton td 20 –0.4 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500 10 –5 –10 –20 Collector Current IC (mA) CRT D.U.T. tstg Test Circuit D.U.T. 1.0 215 6k 1k 50 0.002 6V + – 50 + – 50 200 –10.3 V Unit R : Q C : μF 10% 90% 10% 90% ton R07DS0430EJ0400 Rev.4.00 Jun 07, 2011 toff P.G. tr ≤ 5 ns PW 5 μs duty ratio ≤ 2% –7 V 100 0.002 – + 50 CRT 240 0.002 + – 50 –5 V Unit R : Q C : μF Response Waveform Response Waveform 0 Input –13 V 0 Output –500 Switching Time Test Circuit ton, toff Test Circuit 6k 0.002 –50 –100 –200 Collector Current IC (mA) Switching Time Test Circuit P.G. tr, tf ≤ 15 ns PW 5 μs duty ratio ≤ 10% –5 –10 –20 –50 –100 –200 –500 Switcing Time vs. Collector Current –1.1 –1.0 IC = 10 IB –1.0 Base to Emitter Saturation Voltage vs. Collector Current Swiching Time t (ns) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SA673A(K) 9V Input 0 0 Output 10% 10% tstg Page 4 of 5 2SA673A(K) Preliminary Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A MASS[Typ.] 0.25g 4.8 ± 0.3 Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA673AKBTZ-E 2SA673AKCTZ-E 2SA673AKDTZ-E Quantity Shipping Container Hold Box, Radial Taping 2500 Notes: 1. For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. 2. Leads is forming applied as following figure. Unit: mm 18.0 9.0 19.0 16.0 24.7 max. 12.7 2.5 2.5 6.35 12.7 R07DS0430EJ0400 Rev.4.00 Jun 07, 2011 4.0 Page 5 of 5 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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